HKUST Cross-Campus Memory Research Earns Consecutive IEEE EDL Editor's Picks and Cover Recognition
We are pleased to announce that two papers resulting from a collaboration between faculty members and students from the Guangzhou and Clear Water Bay campuses of HKUST have been selected as Editor's Picks by IEEE Electron Device Letters (EDL) in consecutive issues.
The first paper, “All-ALD Sequential Monolithic Integration of Selector-Free Five-Layer Ferroelectric Diodes for 3D Cross-Point Memory” by Wenjuan Zhou, Ruizhan Yan, Renhao Xue, Mansun Chan, and Xiwen Liu, has been selected as the Featured Cover Article of the August 2026 issue of EDL. The second paper, “Selector-Free Ternary Content Addressable Memory on 3D Stacked Complementary FeCAP” by Renhao Xue, Ruizhan Yan, Mansun Chan, and Xiwen Liu, has been selected as an Editor's Pick for the September 2026 issue.
EDL is one of the premier journals in electron-device research and is widely regarded as highly selective, with an estimated acceptance rate of approximately 20%. Editor's Picks are chosen from among the papers published in each issue to highlight works of particular significance, quality, and potential impact on the field. In addition, the Featured Cover Article is selected from the Editor's Picks and receives special recognition on the cover of the journal.
Having two papers from the same research team selected as Editor's Picks in consecutive issues of EDL is a rare distinction. The additional selection of one of these papers as the Featured Cover Article further underscores the significance and impact of the team's research on advanced ferroelectric memory technologies and their applications in next-generation computing systems.
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