HKUST ECE to Shine at the 2024 IEEE IEDM in San Francisco
The 70th IEEE International Electron Devices Meeting (IEDM), technically sponsored by the IEEE Electron Devices Society, and a premier global forum for showcasing groundbreaking advancements in electronic device technology, will be held from December 7 to 11, 2024, in San Francisco, USA. The Department of Electronic and Computer Engineering (ECE) at The Hong Kong University of Science and Technology (HKUST) will play a prominent role at this prestigious event, with ECE Ph.D. students presenting five research papers across technical sessions, including semiconductor devices and neuromorphic computing.
Research Highlights
The following five research papers will be represented by ECE Ph.D. students at the IEDM:
1. Stacked Strongly Coupled GaN/SiC Cascode Device with Fast Switching and Reclaimed Strong dv/dt Control
Ji Shu, Heng Wang, Mian Tao, Yat Hon Ng, Sirui Feng, Yangming Du, Zongjie Zhou, Jiahui Sun, Ricky Shi-Wei Lee, Kevin Jing Chen
2. An All-GaN Semiconducting-Gate HEMT for Inherent Gate-Level High-Voltage Protection and Synchronous Switching with Photoelectrically Enhanced Conductivity
Sirui Feng, Haochen Zhang, Tao Chen, Li Zhang, Wenjie Song, Song Yang, Yutao Geng, Zheyang Zheng, Kevin Jing Chen
3. Reconfigurable Neurotransistors Based on Wide-bandgap Semiconductors for Adaptive Reservoir Computing
Tao Chen, Zheyang Zheng, Sirui Feng, Li Zhang, Yan Cheng, Yat Hon Ng, Kevin Jing Chen
4. In-Memory Neural Stochastic Differential Equations with Probabilistic Differential Pair Achieved by In-Situ P-bit using CMOS Integrated Voltage-Controlled Magnetic Tunnel Junctions
Zhihua Xiao, Yaoru Hou, Zihan Tong, Yicheng Jiang, Yiyang Zhang, Xuezhao Wu, Albert Lee, Di Wu, Hao Cai, Qiming Shao
5. Cryogenic In-Memory Computing Circuits with Giant Anomalous Hall Current in Magnetic Topological Insulators for Quantum Control
Kun Qian, Albert Lee, Zhihua Xiao, Haoran He, Shunkong Cheung, Yuting Liu, Ferris Nugraha, Qiming Shao
Faculty Contributions
In addition to student presentations, five ECE faculty members will attend the IEDM and they have been contributing significantly to the electron device community by serving in the IEDM and in the IEEE Electron Devices Society.
Professor Kevin Jing Chen is a member of the Power, Microwave/Mm-Wave, and Analog Devices/Systems technical committee. He is an IEEE fellow and the editor of the IEEE Transactions on Electron Devices (TED). Additionally, Professor Kevin Jing Chen is a co-author of another IEDM paper titled “Polarization Enhanced GaN Complementary Logic Circuits with Short Propagation Delay,” collaborating with a team led by an ECE alumnus from Peking University.
Professor Mansun Chan serves as the Vice President of the Electron Device Society Educational Activities. He is a Distinguished Lecturer and a Fellow of the IEEE.
Professor Man Wong is a member of the Sensors, MEMs, and Bioelectronics Committee and will attend the EDS Board of Governors meeting as the Editor-in-Chief of the IEEE Journal of the Electron Devices Society (J-EDS).
Professor Yansong Yang will present at the EDS Technical Committee meeting as the Chair of the EDS MEMS Technical Committee. He is also the editor of the IEEE TED and the TPC Co-Chair for the upcoming 2025 IEEE EDTM to be held in Hong Kong.
Professor Qiming Shao serves on the Emerging Device and Compute Technology technical committee and will present at the EDS Board of Governors meeting as the IEEE EDS Young Professionals Committee chair. He will also participate as a panelist in the “Overcoming Challenges and Creating Opportunities” session at the EDS Women in Electron Devices/Young Professionals event.
Call for gathering
Many ECE alumni who have made significant contributions to electronic device technology will also be present at the IEDM. Similar to last year’s IEDM gathering (see photo), we plan to host an HKUST gathering at the IEDM 2024, and we welcome everyone to join us in San Francisco to enjoy a meal and to meet friends old and new. Please register through the link.
HKUST gathering at the IEDM 2023