A Paper by PhD Graduate Hao FENG Won the Charitat Award in ISPSD’16

Hao FENG, PhD graduate from Department of Electronic and Computer Engineering (ECE), supervised by Prof. Johnny Sin has won the Charitat Award (for Best Young Researchers) in the 28th International Symposium on Power Semiconductor Devices & ICs (ISPSD) that was held in Prague, Czech Republic June 12–16, 2016.

ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices, power integrated circuits, hybrid technologies, and applications with an acceptance rate of ~20% for oral presentations.

The winning paper is entitled “A 1200 V-Class FIN P-Body IGBT with Ultra-narrow-mesas for Low Conduction Loss”.


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