HKUST made a strong presence at the 2025 IEEE IEDM in San Francisco
The 71st IEEE International Electron Devices Meeting (IEDM), technically sponsored by the IEEE Electron Devices Society, and a premier global forum for showcasing groundbreaking advancements in electronic device technology, was held from December 6 to 10, 2025, in San Francisco, USA. The Department of Electronic and Computer Engineering (ECE) at The Hong Kong University of Science and Technology (HKUST) played a prominent role at this prestigious event, presenting three papers across technical sessions, including semiconductor devices and neuromorphic computing.
Research Highlights
The following three research papers were represented by ECE Ph.D. students and postdoc researchers at the IEDM:
26-2 | A Crosstalk-Free GaN-on-Si Power Integration Platform for Integrated Half-Bridge Circuits and Bi-directional Switches
Zheng Wu, Zongjie Zhou, Longge Deng, Tao Chen, Yat Hon Ng, Yan Cheng, Yutao Geng, Kevin Jing Chen
20-1 | Fully Analog In-Memory Annealing Ising Machine with Unified Deterministic and Probabilistic Computing Array Using CMOS-integrated VCMA-MTJ
Yaoru Hou, Zhihua Xiao, Xuezhao Wu, Zihan Tong, Shuyu Wang, Ching Ho Chan, Yunyang Lu, Yiyang Zhang, Chin-Chung Chen, Zheng Zhu, Albert Lee, Di Wu, Hao Cai, Qiming Shao
43-5 | Monolithic 3D-Integrated Neuromorphic Biosignal Processor Using Hydrogen-Controlled Dual-Gate TFTs on a Flexible Substrate
Runxiao Shi, Shiran Guo, Linghan Wang, Siyang Liu, Wangran Wu, Yushen Hu, Weifeng Sun, Man Wong
Faculty Contributions
In addition to ECE-led technical presentations, four ECE faculty members attended the IEDM and they have been contributing significantly to the electron device community by serving in the IEDM and in the IEEE Electron Devices Society.
Professor Kevin Jing Chen is a member of the Power, Microwave/Mm-Wave, and Analog Devices/Systems technical committee. He is an IEEE fellow and the editor of the IEEE Transactions on Electron Devices (TED). Additionally, Professor Kevin Jing Chen is a co-author of two other IEDM papers. One is titled “26-4 | E-Mode p-GaN Gate Punch-Through HEMT with Robust Non-Destructive Drain Breakdown,” in collaboration with a team led by an ECE alumnus from Peking University. The other is titled “36-1 | First Integration of GaN Low-Voltage PA MMIC into Mobile Handsets with Superior Efficiency Over 50%”, in collaboration with a team led by Dynax Semiconductor Inc.
Professor Mansun Chan serves as the Vice President of the Electron Device Society Educational Activities. He is a Distinguished Lecturer and a Fellow of the IEEE. He is a co-author of one IEDM paper titled “32-3 | Nonlinear Ferroelectric Diode Offers High Security in Accurate and Energy-Efficient Compute-in-Memory”, collaborating with a team led by an ECE alumnus from HKUST (Guangzhou).
Professor Man Wong attended the EDS Board of Governors meeting as the Editor-in-Chief of the IEEE Journal of the Electron Devices Society (J-EDS).
Professor Qiming Shao presented at the EDS Board of Governors meeting as the IEEE EDS Young Professionals Committee chair. He also co-organized the EDS Women in Electron Devices/Young Professionals event at IEDM.
HKUST gathering
Many ECE alumni who have made significant contributions to electronic device technology have also been present at the IEDM 2025, where we hosted an HKUST alumni and friend gathering.
