People Publications
Publication ID
1783.1-89767
Publication Type
Article
Publication Year
2018
Publication Title
An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver With GaN FETs and Fully Integrated LED Shunt Protectors
Publication Citation
IEEE Journal of Solid-State Circuits, v. 53, (3), March 2018, p. 913-923
Publication ID
1783.1-89472
Publication Type
Article
Publication Year
2018
Publication Title
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands
Publication Citation
NANOTECHNOLOGY, v. 29, (22), March 2018, article number 225601
Publication ID
1783.1-93973
Publication Type
Article
Publication Year
2018
Publication Title
GaAs Solar Cells on Nanopatterned Si Substrates
Publication Citation
IEEE Journal of Photovoltaics, v. 8, (6), November 2018, article number 8488691, p. 1635-1640
Publication ID
1783.1-87855
Publication Type
Article
Publication Year
2017
Publication Title
O-band Electrically Injected Quantum Dot Micro-ring Lasers on On-axis (001) GaP/Si and V-groove Si
Publication Citation
OPTICS EXPRESS, v.25, (22), October 2017, p. 26853-26860
Publication ID
1783.1-88898
Publication Type
Article
Publication Year
2017
Publication Title
Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths
Publication Citation
Applied Physics Letters, v. 111, (21), November 2017
Publication ID
1783.1-83803
Publication Type
Article
Publication Year
2017
Publication Title
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
Publication Citation
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7837657, p. 824-831
Publication ID
1783.1-83632
Publication Type
Article
Publication Year
2017
Publication Title
Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon
Publication Citation
ACS Photonics, v. 4, (2), February 2017, p. 204-210
Publication ID
1783.1-90687
Publication Type
Article
Publication Year
2018
Publication Title
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si
Publication Citation
Optics Express, v. 26, (11), May 2018, p. 14514-14523
Publication ID
1783.1-89547
Publication Type
Article
Publication Year
2018
Publication Title
Chemical vapor deposited monolayer Mo<sub>S</sub> top-gate MOSFET with atomic-layer deposited ZrO<sub>2</sub> as gate dielectric
Publication Citation
Semiconductor Science and Technology, v.33, (4), March 2018, article number 045004
Publication ID
1783.1-92206
Publication Type
Article
Publication Year
2018
Publication Title
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy
Publication Citation
Optics Letters, v. 43, (14), July 2018, p. 3401-3404
Publication ID
1783.1-38776
Publication Type
Conference paper
Publication Year
2010
Publication Title
Will LED on Si Become Mainstream Technology?
Publication Citation
China International Optoelectronics Expo, Shenzhen, China, Septeember 6-9, 2010
Publication ID
1783.1-38827
Publication Type
Conference paper
Publication Year
2010
Publication Title
Optimization of GaAs buffer layer for high quality InP epitaxial layer grown on Si substrate for electronic devices applications by MOCVD
Publication Citation
11th National MOCVD Conference, China, Suzhou, China, January 12-15, 2010
Publication ID
1783.1-38951
Publication Type
Conference paper
Publication Year
2010
Publication Title
High-resolution Light Emitting Diode on Silicon (LEDoS) Micro-display
Publication Citation
International Workshop on Nitride Semiconductors 2010, Tampa, Florida, USA, September 20-24, 2010
Publication ID
1783.1-39105
Publication Type
Conference paper
Publication Year
2010
Publication Title
Will LED on Si become Mainstream Technology
Publication Citation
International Electron Devices and Materials Symposium, Chungli, Taiwan, Nov 18-19, 2010
Publication ID
1783.1-39142
Publication Type
Conference paper
Publication Year
2010
Publication Title
III-nitride LEDs on Si Substrates
Publication Citation
SPIE Photonics West, San Francisco, CA, USA, 23 - 28 January 2010
Publication ID
1783.1-87648
Publication Type
Article
Publication Year
2017
Publication Title
Low-Flicker Lighting from High-Voltage LEDs Driven by a Single Converter-Free Driver
Publication Citation
IEEE Photonics Technology Letters, v. 29, (19), October 2017, article number 9013783, p. 1675-1678
Publication ID
1783.1-87647
Publication Type
Article
Publication Year
2017
Publication Title
Tristate Memory Cells Using Double-Peaked Fin-Array III-V Tunnel Diodes Monolithically Grown on (001) Silicon Substrates
Publication Citation
IEEE Transactions on Electron Devices, v.64, (10), Oct 2017, article number 8012489, p. 4078-4083
Publication ID
1783.1-88657
Publication Type
Article
Publication Year
2017
Publication Title
Parametric Study of High-performance 1.55 mu m InAs Quantum Dot Microdisk Lasers on Si
Publication Citation
Optics Express, v.25, (25), December 2017, p. 31281-31293
Publication ID
1783.1-87865
Publication Type
Article
Publication Year
2017
Publication Title
Epitaxial Growth of GaSb on V-grooved Si (001) Substrates with an Ultrathin GaAs Stress Relaxing Layer
Publication Citation
Applied Physics Letters, v. 111, (17), October 2017, article number 172103
Publication ID
1783.1-85489
Publication Type
Article
Publication Year
2017
Publication Title
Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si
Publication Citation
Physica Status Solidi (A) Applications and Materials Science, V. 214, (8), 15 May 2017, article number 1600817
Publication ID
1783.1-87856
Publication Type
Article
Publication Year
2017
Publication Title
Monolithically Integrated InAs/InGaAs Quantum Dot Photodetectors on Silicon Substrates
Publication Citation
Optics Express, v. 25, (22), October 2017, p. 27715-27723
Publication ID
1783.1-33250
Publication Type
Article
Publication Year
2000
Publication Title
Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells
Publication Citation
Semiconductor science and technology, v. 15, (2), 2000, p. 189-196
Publication ID
1783.1-33264
Publication Type
Article
Publication Year
2000
Publication Title
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures
Publication Citation
Journal of Electronic Materials, v. 29, (2), 2000, p. 225-230
Publication ID
1783.1-33251
Publication Type
Article
Publication Year
1997
Publication Title
Dependence of polarization mode and threshold current on tensile strain in AIGaAs/GaAsP quantum well lasers
Publication Citation
Solid-state electronics, v. 41, (4), 1997, p. 647-649
Publication ID
1783.1-33256
Publication Type
Article
Publication Year
1997
Publication Title
Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off
Publication Citation
I.E.E.E. transactions on electron devices, v. 44, (1), 1997, p. 11-16
Publication ID
1783.1-33239
Publication Type
Article
Publication Year
1996
Publication Title
Tensile-strained barrier GaAsP/GaAs single quantum-well lasers
Publication Citation
Applied physics letters, v. 68, (26), 1996, p. 3778-3780
Publication ID
1783.1-33244
Publication Type
Article
Publication Year
1996
Publication Title
Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers
Publication Citation
IEEE journal of quantum electronics, v. 32, (1), 1996, p. 29-36
Publication ID
1783.1-33247
Publication Type
Article
Publication Year
1996
Publication Title
Exciton dynamics and spin-flip in tensile strained quantum wells
Publication Citation
Solid-state electronics, v. 40, (1-8), 1996, p. 737-740
Publication ID
1783.1-33270
Publication Type
Article
Publication Year
1996
Publication Title
Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells
Publication Citation
Journal of the Optical Society of America. B, Optical physics, v. 13, (5), 1996, p. 994-999
Publication ID
1783.1-33245
Publication Type
Article
Publication Year
1995
Publication Title
Valence band offsets in strained GaAs1-xPx/GaAs heterojunctions
Publication Citation
Journal of Electronic Materials, v. 24, (6), 1995, p. 713-717
Publication ID
1783.1-33252
Publication Type
Article
Publication Year
1995
Publication Title
High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes
Publication Citation
IEEE photonics technology letters, v. 7, (2), 1995, p. 140-143
Publication ID
1783.1-33269
Publication Type
Article
Publication Year
1995
Publication Title
Resonant tunneling injection quantum-well lasers
Publication Citation
IEEE photonics technology letters, v. 7, (6), 1995, p. 596-598
Publication ID
1783.1-85737
Publication Type
Article
Publication Year
2017
Publication Title
High Performance Monolithically Integrated GaN Driving VMOSFET on LED
Publication Citation
IEEE Electron Device Letters, v. 38, (6), June 2017, article number 7893746, p. 752-755
Publication ID
1783.1-33241
Publication Type
Article
Publication Year
1994
Publication Title
GaAs1-xPx/GaAs quantum-well structures with tensile-strained barriers
Publication Citation
IEEE journal of quantum electronics, v. 30, (2), 1994, p. 459-465
Publication ID
1783.1-73168
Publication Type
Conference paper
Publication Year
2015
Publication Title
An AMLED Microdisplay Driver SoC with Built-In 1.25-Mb/s VLC Transmitter
Publication Citation
2015 Symposium on VLSI Circuits (VLSI Circuits 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. C328-C329
Publication ID
1783.1-65083
Publication Type
Conference paper
Publication Year
2014
Publication Title
High performance self-aligned AlN/GaN MISHEMT with in-situ SiNx gate dielectric and regrown source/drain
Publication Citation
CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology, 2014, p. 201-204
Publication ID
1783.1-88501
Publication Type
Article
Publication Year
2017
Publication Title
Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters
Publication Citation
IEEE Electron Device Letters, v. 39, (2), Feb 2018, article number 1, p. 224-227
Publication ID
1783.1-84980
Publication Type
Article
Publication Year
2017
Publication Title
A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode
Publication Citation
IEEE Electron Device Letters, v. 38, (4), April 2017, article number 7847414, p. 501-504
Publication ID
1783.1-84284
Publication Type
Article
Publication Year
2017
Publication Title
1.55 μm Room-temperature Lasing from Subwavelength Quantum-dot Microdisks Directly Grown on (001) Si
Publication Citation
Applied Physics Letters, v. 110, (12), March 2017, Article Number 121109
Publication ID
1783.1-87609
Publication Type
Article
Publication Year
2017
Publication Title
Optical Cross-talk Reduction in a Quantum-dot-based Full-color Micro-light-emitting-diode Display by a Lithographic-fabricated Photoresist Mold
Publication Citation
Photonics Research, v. 5, (5), October 2017, p. 411-416
Publication ID
1783.1-79543
Publication Type
Article
Publication Year
2016
Publication Title
Full-color pixelated-addressable light emitting diode on transparent substrate (LEDoTS) micro-displays by CoB
Publication Citation
Journal of Display Technology, v. 12, (7), July 2016, article number 7386564, p. 724-746
Publication ID
1783.1-79673
Publication Type
Article
Publication Year
2016
Publication Title
Optical crosstalk analysis of micro-pixelated GaN-based light-emitting diodes on sapphire and Si substrates
Publication Citation
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1193-1198
Publication ID
1783.1-76867
Publication Type
Article
Publication Year
2016
Publication Title
Mastering the Marriage of III-Vs and Silicon
Publication Citation
Compound Semiconductor, v. 22, (1), 2016, Feb, p. 64-68
Publication ID
1783.1-33253
Publication Type
Article
Publication Year
1994
Publication Title
Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures
Publication Citation
Journal of Electronic Materials, v. 23, (7), 1994, p. 649-652
Publication ID
1783.1-33287
Publication Type
Article
Publication Year
1994
Publication Title
Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy
Publication Citation
Journal of Crystal Growth, v. 139, (3-4), 1994, p. 344-350
Publication ID
1783.1-41420
Publication Type
Article
Publication Year
1994
Publication Title
Magneto-optical Properties of biaxially Strained Quanmm Wells
Publication Citation
Philosophical Magazine B, v. 70, (3), 1994, p. 397-408
Publication ID
1783.1-47605
Publication Type
Article
Publication Year
1993
Publication Title
Analysis of slow-wave transmission lines on multi-layered semiconductor structures including conductor loss
Publication Citation
IEEE transactions on microwave theory and techniques, v. 41, (5), 1993, p. 824-829
Publication ID
1783.1-33236
Publication Type
Article
Publication Year
1993
Publication Title
Valence-band-shape modification due to band coupling in strained quantum wells
Publication Citation
Physical Review B, v. 47, (20), May 1993, p. 13926-13929
Publication ID
1783.1-33249
Publication Type
Article
Publication Year
1993
Publication Title
Ultrahigh mobility two-dimensional electron gas in AlxGa 1-xAs/GaAs heterostructures by organometallic vapor phase epitaxy
Publication Citation
Applied physics letters, v. 63, (14), 1993, p. 1960-1962
Publication ID
1783.1-33273
Publication Type
Article
Publication Year
1993
Publication Title
Field-induced absorption edge merging in tensile strained GaAsP quantum wells
Publication Citation
Applied physics letters, v. 62, (26), 1993, p. 3473-3475
Publication ID
1783.1-33274
Publication Type
Article
Publication Year
1993
Publication Title
High-quality two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures by LP-OMVPE
Publication Citation
I.E.E.E. transactions on electron devices, v. 40, (3), 1993, p. 502-506
Publication ID
1783.1-33280
Publication Type
Article
Publication Year
1993
Publication Title
Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells
Publication Citation
Applied physics letters, v. 63, (26), 1993, p. 3616-3618
Publication ID
1783.1-41416
Publication Type
Article
Publication Year
1993
Publication Title
Focal Plane Arrays for Submillimeter Waves Using Two-Dimensional Electron Gas Elements
Publication Citation
Remote Sensing Reviews, v. 8, 1993, p. 29
Publication ID
1783.1-33285
Publication Type
Article
Publication Year
1993
Publication Title
Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers
Publication Citation
IEEE transactions on microwave theory and techniques, v. 41, (4), April 1993, p. 581-589
Publication ID
1783.1-33240
Publication Type
Article
Publication Year
1992
Publication Title
Optically pumped submillimeter wave semiconductor lasers
Publication Citation
IEEE journal of quantum electronics, v. 28, (8), 1992, p. 1773-1777
Publication ID
1783.1-76850
Publication Type
Article
Publication Year
2016
Publication Title
Off-state Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-gate Annealing
Publication Citation
Semiconductor Science and Technology, v. 31, (5), April 2016, Article no. 055019
Publication ID
1783.1-33265
Publication Type
Article
Publication Year
1992
Publication Title
Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium
Publication Citation
Journal of Electronic Materials, v. 21, (10), 1992, p. 947-953
Publication ID
1783.1-73170
Publication Type
Conference paper
Publication Year
2015
Publication Title
High Performance Field Effect Transistors Based on Large Area Mos<sub>2</sub> Thin Films
Publication Citation
2015 MRS Spring Meeting & Exhibit, San Francisco, CA, USA, 6-10 April 2015
Publication ID
1783.1-76855
Publication Type
Article
Publication Year
2016
Publication Title
Fully Vertical GaN p-i-n DiodesUsing GaN-on-Si Epilayers
Publication Citation
IEEE Electron Device Letters, v. 37, (5), May 2016, p. 636-639
Publication ID
1783.1-79074
Publication Type
Article
Publication Year
2016
Publication Title
Growing InGaAs Quasi-quantum Wires Inside Semi-rhombic Shaped Planar InP Nanowires on Exact (001) Silicon
Publication Citation
Applied Physics Letters, v. 108, (24), June 2016, Article number 242105
Publication ID
1783.1-76866
Publication Type
Article
Publication Year
2016
Publication Title
Monolithic Integration of Tunnel Diode Based Inverters on Exact (001) Si Substrates
Publication Citation
IEEE Electron Device Letters, v. 37, (6), June 2016, article number 7450138, p. 717-720
Publication ID
1783.1-76862
Publication Type
Article
Publication Year
2016
Publication Title
Optically Pumped 1.3μm Room-temperature InAs Quantum-dot Micro-disk Lasers Directly Grown on (001) Silicon
Publication Citation
Optics Letters, v. 41, (7), April 2016, p. 1664-1667
Publication ID
1783.1-75828
Publication Type
Article
Publication Year
2016
Publication Title
GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4
Publication Citation
IEEE Electron Device Letters, v. 37, (1), January 2016, article number 7323841, p. 24-27
Publication ID
1783.1-79294
Publication Type
Article
Publication Year
2016
Publication Title
Sub-wavelength InAs Quantum Dot Micro-disk Lasers Epitaxially Grown on Exact Si (001) Substrates
Publication Citation
Applied Physics Letters, v. 108, (22), May 2016, Article number 221101
Publication ID
1783.1-68495
Publication Type
Conference paper
Publication Year
2014
Publication Title
LED on silicon (LEDoS) microdisplays
Publication Citation
Solid-State and Organic Lighting, SOLED 2014, Australia : Optical Society of America (OSA), 2014
Publication ID
1783.1-68373
Publication Type
Conference paper
Publication Year
2014
Publication Title
1700 pixels per inch (PPI) passive-matrix micro-LED display powered by ASIC
Publication Citation
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, December 2014, article number 6978524
Publication ID
1783.1-80536
Publication Type
Article
Publication Year
2016
Publication Title
Coalescence of Planar GaAs Nanowires into Strain-free Three-dimensional Crystals on Exact (001) Silicon
Publication Citation
Journal of Crystal Growth, v. 454, November 2016, p. 19-24
Publication ID
1783.1-76845
Publication Type
Article
Publication Year
2016
Publication Title
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate
Publication Citation
Applied Physics Express, v. 9, (3), March 2016, Article number 031001
Publication ID
1783.1-76857
Publication Type
Article
Publication Year
2016
Publication Title
Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
Publication Citation
IEEE Transactions on Electron Devices, v. 63, (4), April 2016, article number 7412742, p. 1587-1593
Publication ID
1783.1-76860
Publication Type
Article
Publication Year
2016
Publication Title
Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si
Publication Citation
Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 868-872
Publication ID
1783.1-76863
Publication Type
Article
Publication Year
2016
Publication Title
Optimization of electrode structure for flip-chip HVLED via two-level metallization
Publication Citation
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1199-1203
Publication ID
1783.1-76854
Publication Type
Article
Publication Year
2016
Publication Title
Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique
Publication Citation
Journal of Display Technology, v. 12, (4), April 2016, article number 7303888, p. 397-401
Publication ID
1783.1-76851
Publication Type
Article
Publication Year
2016
Publication Title
Optimization of a common buffer platform for monolithic integration of InGaN/GaN light emitting diodes and AlGaN/GaN high electron mobility transistors
Publication Citation
Journal of Electronic Materials, v. 45, (4), April 2016, p. 2092-2101
Publication ID
1783.1-79964
Publication Type
Article
Publication Year
2016
Publication Title
Monolithic Integration of Enhancement-mode Vertical Driving Transistorson a Standard InGaN/GaN Light Emitting Diode Structure
Publication Citation
Applied Physics Letters, v. 109, (5), August 2016, article number 053504
Publication ID
1783.1-76844
Publication Type
Article
Publication Year
2016
Publication Title
Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode
Publication Citation
IEEE Photonics Technology Letters, v. 28, (10), May 2016, article number 7416644, p. 1130-1133
Publication ID
1783.1-33277
Publication Type
Article
Publication Year
1992
Publication Title
Magneto-optical properties of quantum wells under biaxial tensile strain
Publication Citation
Surface science, v. 267, (1-3), 1992, p. 533-536
Publication ID
1783.1-41417
Publication Type
Article
Publication Year
1992
Publication Title
Exciton Trapping in Strained GaAsP Quantum Wells
Publication Citation
Semiconductor Science and Technology, v. 7, 1992, p. 170-172
Publication ID
1783.1-33281
Publication Type
Article
Publication Year
1991
Publication Title
Patterned substrate epitaxy surface shapes
Publication Citation
Journal of Crystal Growth, v. 108, (1-2), 1991, p. 73-88
Publication ID
1783.1-33283
Publication Type
Article
Publication Year
1991
Publication Title
Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
Publication Citation
Journal of Electronic Materials, v. 20, (2), 1991, p. 197-201
Publication ID
1783.1-46367
Publication Type
Article
Publication Year
1990
Publication Title
Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition
Publication Citation
Journal of Electronic Materials, v. 19, (9), 1990, p. 967-974
Publication ID
1783.1-33260
Publication Type
Article
Publication Year
1990
Publication Title
Solution to characteristics of planar transmission lines made of finite-thickness metal on multi-layer media
Publication Citation
IEEE MTT-S International Microwave Symposium digest, v. 1, 1990, p. 179-182
Publication ID
1783.1-33278
Publication Type
Article
Publication Year
1990
Publication Title
Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells
Publication Citation
Surface science, v. 228, (1-3), 1990, p. 314-317
Publication ID
1783.1-45063
Publication Type
Article
Publication Year
1988
Publication Title
Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
Publication Citation
Applied physics letters, v. 53, (25), 1988, p. 2501-2503
Publication ID
1783.1-45169
Publication Type
Article
Publication Year
1988
Publication Title
Temperature stability of AlxGa1-xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy
Publication Citation
Journal of applied physics, v. 64, (2), 1988, p. 922-925
Publication ID
1783.1-33237
Publication Type
Article
Publication Year
1988
Publication Title
Saturation of light- and heavy-hole exciton energies in very narrow quantum wells
Publication Citation
Physical Review B, v. 38, (14), November 1988
Publication ID
1783.1-33242
Publication Type
Article
Publication Year
1988
Publication Title
Effects of polyimide passivation on the photoluminescence of high-purity epitaxial GaAs
Publication Citation
Journal of applied physics, v. 63, (3), 1988, p. 962-964
Publication ID
1783.1-83273
Publication Type
Article
Publication Year
2016
Publication Title
Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED Displays
Publication Citation
IEEE Transactions on Electron Devices, v. 63, (12), December 2016, article number 7726032, p. 4832-4838
Publication ID
1783.1-33263
Publication Type
Article
Publication Year
1988
Publication Title
In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy
Publication Citation
Applied physics letters, v. 53, (21), 1988, p. 2068-2070
Publication ID
1783.1-76842
Publication Type
Conference paper
Publication Year
2015
Publication Title
Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization
Publication Citation
57th Electronic Materials Conference (EMC), Columbus, Ohio, USA, 24-26 June 2015
Publication ID
1783.1-68458
Publication Type
Conference paper
Publication Year
2014
Publication Title
III-V-IV Integration Toward Electronics and Photonics Convergence on a Silicon Platform
Publication Citation
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, January 2014, article number 7021190
Publication ID
1783.1-77657
Publication Type
Article
Publication Year
2016
Publication Title
Design and Characterization of Active Matrix LED Microdisplays with Embedded Visible Light Communication Transmitter
Publication Citation
Journal of Lightwave Technology, v. 34, (14), July 2016, p. 3449-3457
Publication ID
1783.1-81356
Publication Type
Article
Publication Year
2016
Publication Title
1.3-μm InAs Quantum-dot Micro-disk Lasers on V-groove Patterned and Unpatterned (001) silicon
Publication Citation
Optics Express, v. 24, (18), September 2016, p. 21038-21045
Publication ID
1783.1-79556
Publication Type
Article
Publication Year
2016
Publication Title
Temperature Characteristics of Epitaxially Grown InAs Quantum Dot Micro-disk Lasers on Silicon for On-chip Light Sources
Publication Citation
Applied Physics Letters, v. 109, (1), July 2016, article number 011104
Publication ID
1783.1-80816
Publication Type
Article
Publication Year
2016
Publication Title
Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
Publication Citation
IEEE Electron Device Letters, v. 37, (9), September 2016, article number 7524000, p. 1158-1161
Publication ID
1783.1-79326
Publication Type
Article
Publication Year
2016
Publication Title
Clivorine, an Otonecine Pyrrolizidine Alkaloid from Ligularia Species, Impairs Neuronal Differentiation via NGF-Induced Signaling Pathway in Cultured PC12 Cells
Publication Citation
Phytomedicine, v. 23, (9), August 2016, p. 931-938
Publication ID
1783.1-76378
Publication Type
Article
Publication Year
2016
Publication Title
Selectable Synthesis of 2-D MoS<sub>2</sub> and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film
Publication Citation
IEEE Transactions on Nanotechnology, v. 15, (2), March 2016, article number 7398078, p. 310-317
Publication ID
1783.1-75491
Publication Type
Article
Publication Year
2016
Publication Title
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Publication Citation
Journal of Crystal Growth, v. 433, January 2016, p. 19-23
Publication ID
1783.1-83071
Publication Type
Article
Publication Year
2016
Publication Title
Highly Ordered Horizontal Indium Gallium Arsenide/Indium Phosphide Multi-Quantum-Well in Wire Structure on (001) Silicon Substrates
Publication Citation
Journal of Applied Physics, v. 120, (24), December 2016, article number 245701
Publication ID
1783.1-71181
Publication Type
Article
Publication Year
2015
Publication Title
Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Publication Citation
Chinese Physics B, v. 24, (7), July 2015, article number 078102
Publication ID
1783.1-73005
Publication Type
Article
Publication Year
2015
Publication Title
Hetero-epitaxy of L<inf>g</inf> = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications
Publication Citation
Chinese Physics B, v. 24, (8), August 2015, article number 087305
Publication ID
1783.1-68215
Publication Type
Article
Publication Year
2015
Publication Title
Growing Antiphase-domain-free GaAs Thin Films Out of Highly Ordered Planar Nanowire Arrays on Exact (001) Silicon
Publication Citation
Applied Physics Letters, v. 106, (7), February 2015, article number 072105
Publication ID
1783.1-73634
Publication Type
Article
Publication Year
2015
Publication Title
GaN-based LED micro-displays for wearable applications
Publication Citation
Microelectronic Engineering, v. 148, December 2015, p. 98-103
Publication ID
1783.1-75509
Publication Type
Article
Publication Year
2015
Publication Title
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
Publication Citation
Optics Express, v. 23, (25), December 2015, p. 32504-32515
Publication ID
1783.1-68137
Publication Type
Article
Publication Year
2015
Publication Title
Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors
Publication Citation
Applied Physics Letters, v. 106, (18), May 2015, article number 181110
Publication ID
1783.1-65894
Publication Type
Article
Publication Year
2015
Publication Title
MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio
Publication Citation
Journal of Crystal Growth, v. 414, March 2015, p. 237-242
Publication ID
1783.1-65635
Publication Type
Article
Publication Year
2015
Publication Title
High-speed InGaAs photodetectors by selective-area MOCVD toward optoelectronic integrated circuits
Publication Citation
IEEE Journal on Selected Topics in Quantum Electronics, v. 20, (6), November 2015, article number 2321278
Publication ID
1783.1-68087
Publication Type
Article
Publication Year
2015
Publication Title
Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping
Publication Citation
Journal of Crystal Growth, v. 414, March 2015, p. 243-247
Publication ID
1783.1-72708
Publication Type
Article
Publication Year
2015
Publication Title
InAs/GaAs Quantum Dots on GaAs-on-V-grooved-Si Substrate with High Optical Quality in the 1.3 μm Band
Publication Citation
Applied Physics Letters, v. 107, (8), August 2015, article number 081106
Publication ID
1783.1-60785
Publication Type
Conference paper
Publication Year
2013
Publication Title
Characteristics of Submicron-footprint TiO<sub>2</sub>Based AlGaN/GaN MOSHEMT on SiC Substrate
Publication Citation
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013, article number 6628138
Publication ID
1783.1-57245
Publication Type
Conference paper
Publication Year
2012
Publication Title
A novel GaN -based Monolithic SAW/HEMT Oscillator on Silicon
Publication Citation
Ultrasonics Symposium (IUS), 2012 IEEE International, Dresden, 2012, p. 2206-2209
Publication ID
1783.1-38695
Publication Type
Conference paper
Publication Year
2011
Publication Title
Metamorphic p-i-n InGaAs photodetectors grown by MOCVD
Publication Citation
2011 Electronic Materials Conference, Santa Barbara, USA, 22 - 24 June 2011
Publication ID
1783.1-39206
Publication Type
Conference paper
Publication Year
2010
Publication Title
In0.53Ga0.47As MOS-HEMTs on Si Substrates Grown by MOCVD
Publication Citation
InP and Related Materials, Berlin, Germany, 23-27 May 2011
Publication ID
1783.1-47219
Publication Type
Conference paper
Publication Year
2009
Publication Title
III-nitride Based Ultraviolet LED Micro-array Module for Large-scale Display
Publication Citation
37th International Symposium on Compound Semiconductors, Kagawa, Japan, May 31-June 4, 2010
Publication ID
1783.1-47862
Publication Type
Conference paper
Publication Year
2007
Publication Title
SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures
Publication Citation
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p. 670-672
Publication ID
1783.1-37284
Publication Type
Conference paper
Publication Year
2006
Publication Title
Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment
Publication Citation
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 281-284
Publication ID
1783.1-19498
Publication Type
Conference paper
Publication Year
2006
Publication Title
Effects of oxidation temperature on Ga<sub>2</sub>O<sub>3</sub> film thermally grown on GaN
Publication Citation
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, 2006, p. 605-608
Publication ID
1783.1-69385
Publication Type
Article
Publication Year
2015
Publication Title
Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric
Publication Citation
IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7093156, p. 1862-1869
Publication ID
1783.1-68247
Publication Type
Article
Publication Year
2015
Publication Title
The Volatile Oil of Nardostachyos Radix et Rhizoma Induces Endothelial Nitric Oxide Synthase Activity in HUVEC Cells
Publication Citation
PLoS ONE, v. 10, (2), February 2015, article number e0116761
Publication ID
1783.1-73542
Publication Type
Article
Publication Year
2015
Publication Title
Reduced Expression of P2Y2 Receptor and Acetylcholinesterase at Neuromuscular Junction of P2Y1 Receptor Knock-out Mice
Publication Citation
Journal of Molecular Neuroscience, v. 57, (3), November 2015, p. 446-451
Publication ID
1783.1-68016
Publication Type
Article
Publication Year
2015
Publication Title
InAlGaAs/InAlAs MQWs on Si Substrate
Publication Citation
IEEE Photonics Technology Letters, v. 27, (7), April 2015, p. 748-751
Publication ID
1783.1-61807
Publication Type
Article
Publication Year
2014
Publication Title
Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
Publication Citation
Chinese Physics B, v. 23, (3), 2014, article number 038403
Publication ID
1783.1-61654
Publication Type
Article
Publication Year
2014
Publication Title
Growth of Ultra-high Mobility In0.52Al0.48As/InxGa1-xAs (x >= 53%) Quantum Wells on Si Substrates using InP/GaAs Buffers by Metalorganic Chemical Vapor Deposition
Publication Citation
Applied Physics Express, v. 7, (4), 2014, article number 045502
Publication ID
1783.1-60187
Publication Type
Article
Publication Year
2014
Publication Title
Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408 GHz
Publication Citation
Solid-State Electronics, v. 99, 2014, p. 7-10
Publication ID
1783.1-64329
Publication Type
Article
Publication Year
2014
Publication Title
Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD
Publication Citation
Chinese Physics B, v. 23, (12), December 2014, article number 128102
Publication ID
1783.1-33266
Publication Type
Article
Publication Year
1988
Publication Title
Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells
Publication Citation
Journal of applied physics, v. 64, (11), 1988, p. 6562-6564
Publication ID
1783.1-33272
Publication Type
Article
Publication Year
1988
Publication Title
Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition
Publication Citation
Applied physics letters, v. 52, (4), 1988, p. 293-295
Publication ID
1783.1-33286
Publication Type
Article
Publication Year
1988
Publication Title
Temperature Dependence and Persistent Conductivity of GaAs MESFET's with Superlattice Buffers
Publication Citation
I.E.E.E. transactions on electron devices, v. 35, (1), 1988, p. 14-17
Publication ID
1783.1-33255
Publication Type
Article
Publication Year
1987
Publication Title
Mobility Profiling of GaAs Power FET's by Magnetotransconjuctance Measurements
Publication Citation
I.E.E.E. transactions on electron devices, v. 34, (4), 1987, p. 920-925
Publication ID
1783.1-33258
Publication Type
Article
Publication Year
1987
Publication Title
Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures
Publication Citation
Applied physics letters, v. 51, (24), 1987, p. 2010-2012
Publication ID
1783.1-33262
Publication Type
Article
Publication Year
1987
Publication Title
SELECTIVE AREA GROWTH OF HIGH QUALITY GaAs BY OMCVD USING NATIVE OXIDE MASKS.
Publication Citation
Journal of the Electrochemical Society, v. 134, (12), 1987, p. 3149-3155
Publication ID
1783.1-33271
Publication Type
Article
Publication Year
1987
Publication Title
AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition
Publication Citation
Journal of applied physics, v. 62, (1), 1987, p. 120-125
Publication ID
1783.1-63687
Publication Type
Article
Publication Year
2014
Publication Title
Defect Reduction in Epitaxial InP on Nanostructured Si (001) Substrates with Position-controlled Seed Arrays
Publication Citation
Journal of Crystal Growth, v. 405, November 2014, p. 81-86
Publication ID
1783.1-63902
Publication Type
Article
Publication Year
2014
Publication Title
In situ growth of SiNx as gate dielectric and surface passivation for AIN/GaN heterostructures by metalorganic chemical vapor deposition
Publication Citation
Applied physics express, v. 7, (9), September 2014, article number 091002
Publication ID
1783.1-61252
Publication Type
Article
Publication Year
2014
Publication Title
In situ SiNx gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si
Publication Citation
Physica Status Solidi (A) Applications and Materials Science, v. 211, (4), April 2014, p. 775-778
Publication ID
1783.1-63878
Publication Type
Article
Publication Year
2014
Publication Title
Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition
Publication Citation
Applied physics letters, v. 105, (10), September 2014, article number 102911
Publication ID
1783.1-59451
Publication Type
Article
Publication Year
2014
Publication Title
Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition
Publication Citation
Applied physics letters, v. 104, (3), January 2014, article number 032903
Publication ID
1783.1-61858
Publication Type
Article
Publication Year
2014
Publication Title
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD
Publication Citation
IEEE Electron Device Letters, v. 35, (3), 2014, article number 6730671, p. 330-332
Publication ID
1783.1-63782
Publication Type
Article
Publication Year
2014
Publication Title
Performance Enhancements of Flip-Chip Light-Emitting Diodes With High-Density n-Type Point-Contacts
Publication Citation
IEEE Electron Device Letters, v. 35, (10), October 2014, article number 6894119, p. 1049-1051
Publication ID
1783.1-60500
Publication Type
Article
Publication Year
2014
Publication Title
Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si
Publication Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), 2014, p. 890-893
Publication ID
1783.1-61743
Publication Type
Article
Publication Year
2014
Publication Title
Selective Epitaxial Growth of Monolithically Integrated GaN-based Light Emitting Diodes with AlGaN/GaN Driving Transistors
Publication Citation
Applied physics letters, v. 104, (9), March 2014, Article Number 091103
Publication ID
1783.1-63817
Publication Type
Article
Publication Year
2014
Publication Title
Growth and Characterization of Horizontal GaN Wires on Silicon
Publication Citation
Applied Physics Letters, v. 104, (26), June 2014, article number 262101
Publication ID
1783.1-76847
Publication Type
Conference paper
Publication Year
2015
Publication Title
Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration
Publication Citation
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Publication ID
1783.1-65085
Publication Type
Conference paper
Publication Year
2014
Publication Title
Growth of Low Defect-density InP on Exact Si (001) Substrates by Metalorganic Chemical Vapor Deposition with Position-controlled Seed Arrays
Publication Citation
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2014, article number 6880514
Publication ID
1783.1-46997
Publication Type
Conference paper
Publication Year
2007
Publication Title
Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate
Publication Citation
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 813-816
Publication ID
1783.1-37307
Publication Type
Conference paper
Publication Year
2007
Publication Title
Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Publication Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 389-392
Publication ID
1783.1-37354
Publication Type
Conference paper
Publication Year
2007
Publication Title
Comparison of Ni/Au, ITO, and ATO-based current spreading layers for near-ultraviolet light-emitting diodes
Publication Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 4, (7), 2007, p. 2646-2649
Publication ID
1783.1-19167
Publication Type
Conference paper
Publication Year
2007
Publication Title
Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
Publication Citation
65th DRC Device Research Conference, 2007, p. 77-78
Publication ID
1783.1-63780
Publication Type
Article
Publication Year
2014
Publication Title
Quantification of the Transcripts Encoding Different Forms of AChE in Various Cell Types: Real-Time PCR Coupled with Standards in Revealing the Copy Number
Publication Citation
Journal of Molecular Neuroscience, v. 53, (3), July 2014, p. 461-468
Publication ID
1783.1-33284
Publication Type
Article
Publication Year
1987
Publication Title
Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells
Publication Citation
Journal of applied physics, v. 62, (6), 1987, p. 2466-2469
Publication ID
1783.1-11334
Publication Type
Conference paper
Publication Year
2006
Publication Title
Comparison of Ni/Au, Ag/ITO, and Ag/ATO Curent-spreading Layers for Violet Light-Emitting Diodes
Publication Citation
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Publication ID
1783.1-13259
Publication Type
Conference paper
Publication Year
2006
Publication Title
GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC
Publication Citation
2006 Int. Conf. on Solid State Devices and Materials, Yokahama, Japan, Sept 12-15, 2006
Publication ID
1783.1-60550
Publication Type
Article
Publication Year
2014
Publication Title
High-efficiency Blue and Green LEDs Grown on Si with 5 Micrometer Thick GaN Buffer
Publication Citation
Physica Status Solidi (C): Current Topics in Solid State Physics, v. 11, (3-4), 2014, p. 730-733
Publication ID
1783.1-55332
Publication Type
Article
Publication Year
2013
Publication Title
Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric
Publication Citation
IEEE Electron Device Letters, v. 34, (6), 2013, article number 6513267, p. 738-740
Publication ID
1783.1-59792
Publication Type
Article
Publication Year
2013
Publication Title
Material and Device Characteristics of Metamorphic In0.53Ga0.47As MOSHEMTs Grown on GaAs and Si Substrates by MOCVD
Publication Citation
IEEE Transactions on Electron Devices, v. 60, (12), December 2013, article number 6627951, p. 4112-4118
Publication ID
1783.1-57532
Publication Type
Article
Publication Year
2013
Publication Title
A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors
Publication Citation
IEEE Microwave and Wireless Components Letters, v. 23, (6), 2013, article number 6514898, p. 318-320
Publication ID
1783.1-59642
Publication Type
Article
Publication Year
2013
Publication Title
High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates
Publication Citation
IEEE Electron Device Letters, v. 34, (7), 2013, article number 6521369, p. 903-905
Publication ID
1783.1-59420
Publication Type
Article
Publication Year
2013
Publication Title
360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays
Publication Citation
IEEE/OSA Journal of Display Technology, v. 9, (8), 2013, article number 6502265, p. 678-682
Publication ID
1783.1-57531
Publication Type
Article
Publication Year
2013
Publication Title
GaN-Based S-0-Wave Sensors on Silicon for Chemical and Biological Sensing in Liquid Environments
Publication Citation
IEEE Sensors Journal, v. 13, (4), 2013, article number 6374634, p. 1245-1251
Publication ID
1783.1-64182
Publication Type
Article
Publication Year
2013
Publication Title
A Novel Full-Color 3LED Projection System using R-G-B Light Emitting Diodes on Silicon (LEDoS) Micro-displays
Publication Citation
Digest of Technical Papers - SID International Symposium, v. 44, (1), 2013, p. 838-841
Publication ID
1783.1-62043
Publication Type
Article
Publication Year
2013
Publication Title
DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain
Publication Citation
IEEE Transactions on Electron Devices, v. 60, (10), 2013, article number 6576811, p. 3019-3024
Publication ID
1783.1-55270
Publication Type
Article
Publication Year
2013
Publication Title
Investigation of Forward Voltage Uniformity in Monolithic Light-Emitting Diode Arrays
Publication Citation
IEEE Photonics Technology Letters, v. 25, (13), 2013, article number 6516916, p. 1290-1293
Publication ID
1783.1-41415
Publication Type
Conference paper
Publication Year
2003
Publication Title
Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors
Publication Citation
2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27 2003, p. 85
Publication ID
1783.1-41418
Publication Type
Conference paper
Publication Year
2003
Publication Title
AlGaN/GaN/Graded-AlGaN double heterostructure HEMT
Publication Citation
2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sepetmber 16-18 2003, p. 918-919
Publication ID
1783.1-33248
Publication Type
Conference paper
Publication Year
1996
Publication Title
Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers
Publication Citation
IEEE Lasers & Electro-Optics Society Annual Meeting (LEOS), v. 1, 1996, p. 312-313
Publication ID
1783.1-42835
Publication Type
Conference paper
Publication Year
1996
Publication Title
BALANCE - A flexible parallel load balancing system for heterogeneous computing systems and networks
Publication Citation
IEEE INFOCOM '96 - FIFTEENTH ANNUAL JOINT CONFERENCE OF THE IEEE COMPUTER AND COMMUNICATIONS SOCIETIES: NETWORKING THE NEXT GENERATION, PROCEEDINGS VOLS 1-3, 1996, p. 896-903
Publication ID
1783.1-33261
Publication Type
Conference paper
Publication Year
1995
Publication Title
Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off
Publication Citation
Annual Device Research Conference Digest, 1995, p. 38-39
Publication ID
1783.1-33238
Publication Type
Conference paper
Publication Year
1994
Publication Title
Enhanced stimulated emission of excited states in quantum wells by resonant tunneling
Publication Citation
IEEE LEOS Annual Meeting - Proceedings, v. 2, 1994, p. 387-388
Publication ID
1783.1-33275
Publication Type
Conference paper
Publication Year
1994
Publication Title
Tensile-strained AlGaAs/GaAsP single quantum-well lasers
Publication Citation
IEEE LEOS Annual Meeting - Proceedings, v. 1, 1994, p. 109-110
Publication ID
1783.1-33282
Publication Type
Conference paper
Publication Year
1992
Publication Title
2DEG electron bolometric mixers: new results and potential for low-noise THz receivers
Publication Citation
Proceedings of SPIE--the international society for optical engineering, v. 1929, 1992, p. 208-209
Publication ID
1783.1-41414
Publication Type
Conference paper
Publication Year
1989
Publication Title
Insitu Surface Cleaning and Selective Oxidation in OMCVD Systems
Publication Citation
15th International Symp on Gallium Arsenide And Related Compounds, Atlanta, US, 11-14 Sep 1988
Publication ID
1783.1-93562
Publication Type
Conference paper
Publication Year
1988
Publication Title
Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography
Publication Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 877, May 1988, p. 41-51
Publication ID
1783.1-33267
Publication Type
Conference paper
Publication Year
1985
Publication Title
RELATIONSHIP OF MAGNETOTRANSCONDUCTANCE MOBILITY PROFILES AND RF PERFORMANCE OF GAAS FETS.
Publication Citation
IEEE MTT-S International Microwave Symposium digest, 1985, p. 204-206
Publication ID
1783.1-46400
Publication Type
Article
Publication Year
1986
Publication Title
A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition
Publication Citation
Journal of applied physics, v. 60, (10), 1986, p. 3781-3784
Publication ID
1783.1-33243
Publication Type
Article
Publication Year
1986
Publication Title
ROOM LIGHT: THE GREMLIN CLOUDING AMPLIFIER TESTS.
Publication Citation
Microwaves & RF, v. 25, (10), 1986, p. 75-77
Publication ID
1783.1-33259
Publication Type
Article
Publication Year
1986
Publication Title
IVA-3 Parasitic Corrections for Mobility Profiling of Large-Periphery GaAs Power FET's
Publication Citation
I.E.E.E. transactions on electron devices, v. 0, (11), 1986, p. 1850-1851
Publication ID
1783.1-33276
Publication Type
Article
Publication Year
1984
Publication Title
Uniform Deposition of GaAs in a Multiwafer Vapor-Phase Epitaxial System
Publication Citation
I.E.E.E. transactions on electron devices, v. 31, (8), 1984, p. 1086-1089
Publication ID
1783.1-41419
Publication Type
Article
Publication Year
1983
Publication Title
FIR Photoconductivity in Epitaxial InP
Publication Citation
Infrared Physics, v. 23, 1983, p. 311
Publication ID
1783.1-41410
Publication Type
Article
Publication Year
1979
Publication Title
Screw-fastened Joints for Thermal Contact at Low Temperatures
Publication Citation
Rev. Sci. Instrum., v. 50, 1979, p. 254
Publication ID
1783.1-90692
Publication Type
Conference paper
Publication Year
2018
Publication Title
Room-Temperature Electrically Pumped InP-based Laser Directly Grown on on-axis (001) Silicon
Publication Citation
Optics InfoBase Conference Papers, v. Part F94-CLEO_SI 2018, 2018
Publication ID
1783.1-91855
Publication Type
Conference paper
Publication Year
2018
Publication Title
High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy
Publication Citation
45th International Symposium on Compound Semiconductors (ISCS 2018) and The 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018): Compound Semiconductor Week (CSW 2018), Boston, 29 May - 1June 2018
Publication ID
1783.1-59818
Publication Type
Article
Publication Year
2013
Publication Title
A novel BLU-free full-color LED projector using LED on silicon micro-displays
Publication Citation
IEEE Photonics Technology Letters, v. 25, (23), 2013, article number 6626565, p. 2267-2270
Publication ID
1783.1-91636
Publication Type
Conference paper
Publication Year
2018
Publication Title
Room Temperature Lasing from InP/InGaAs Nano-ridges at Telecom-bands
Publication Citation
Optics InfoBase Conference Papers, v. Part F94-CLEO_SI 2018, 2018
Publication ID
1783.1-55022
Publication Type
Article
Publication Year
2013
Publication Title
Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
Publication Citation
Journal of Crystal Growth, v. 370, May 2013, p. 265-268
Publication ID
1783.1-52670
Publication Type
Article
Publication Year
2012
Publication Title
Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate
Publication Citation
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 473-475
Publication ID
1783.1-52675
Publication Type
Article
Publication Year
2012
Publication Title
High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array
Publication Citation
Journal of materials science & technology, v. 28, (2), 2012, p. 132-136
Publication ID
1783.1-52756
Publication Type
Article
Publication Year
2012
Publication Title
Fabrication of 0.3-mu m T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition
Publication Citation
Science China: Physics, Mechanics and Astronomy, v. 55, (4), April 2012, p. 644-648
Publication ID
1783.1-57517
Publication Type
Article
Publication Year
2012
Publication Title
Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs
Publication Citation
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 919-922
Publication ID
1783.1-57518
Publication Type
Article
Publication Year
2012
Publication Title
Thermally activated pop-in and indentation size effects in GaN films
Publication Citation
Journal of physics. D, Applied physics, v. 45, (8), 2012, article number 085301
Publication ID
1783.1-92128
Publication Type
Conference paper
Publication Year
2018
Publication Title
Comparison of MOCVD Grown GaSb on (001) Si substrates using aspect ratio trapping and interfacial misfit growth methods
Publication Citation
2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Hyatt RegencyAustin, United States, 7-10 May 2018
Publication ID
1783.1-92818
Publication Type
Conference paper
Publication Year
2018
Publication Title
A Power Inductor Integration Technology Using a Silicon Interposer for DC-DC Converter Applications
Publication Citation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, 22 June 2018, p. 347-350
Publication ID
1783.1-88988
Publication Type
Conference paper
Publication Year
2018
Publication Title
Experimental Characterization of the Fully Integrated Si-GaN Cascoded FET
Publication Citation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, 22 June 2018, p. 216-219
Publication ID
1783.1-86426
Publication Type
Conference paper
Publication Year
2017
Publication Title
Switching Characteristics of Monolithically Integrated Si-GaN Cascoded Rectifiers
Publication Citation
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017), 2017, article number 7988928, p. 223-226
Publication ID
1783.1-84383
Publication Type
Conference paper
Publication Year
2017
Publication Title
InAs Quantum Dot Micro-disk Lasers Grown on (001) Si Emitting at Communication Wavelengths
Publication Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 10123, February 2017, article number 101230J
Publication ID
1783.1-85858
Publication Type
Conference paper
Publication Year
2017
Publication Title
Quantum Dot Lasers Grown on (001) Si Substrate for Integration with Amorphous Si Waveguides
Publication Citation
Optical Fiber Communications Conference and Exhibition, v. Part F40-OFC 2017, 2017, article number Th3I.7
Publication ID
1783.1-57519
Publication Type
Article
Publication Year
2012
Publication Title
High-speed normal-incidence p-i-n InGaAs photodetectors grown on silicon substrates by MOCVD
Publication Citation
IEEE Photonics Technology Letters, v. 24, (4), 2012, Article number 6086709, Pages 237-239
Publication ID
1783.1-87701
Publication Type
Conference paper
Publication Year
2017
Publication Title
InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates
Publication Citation
2017 International Conference on Compound Semiconductor Manufacturing Technology, Hyatt Regency Indian Wells Resort and SpaIndian Wells, United States, 22 - 25 May 2017
Publication ID
1783.1-19210
Publication Type
Conference paper
Publication Year
2007
Publication Title
Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure
Publication Citation
IEEE MTT-S International Microwave Symposium Digest, 2007, p. 2043-2046
Publication ID
1783.1-57521
Publication Type
Article
Publication Year
2012
Publication Title
Low-leakage-current AlN/GaN MOSHFETs Using Al 2O 3 for increased 2DEG
Publication Citation
IEEE Electron Device Letters, v. 33, (2), 2012, p. 212-214
Publication ID
1783.1-57522
Publication Type
Article
Publication Year
2012
Publication Title
Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD
Publication Citation
IEEE Electron Device Letters, v. 33, (4), April 2012, p. 498-500
Publication ID
1783.1-57526
Publication Type
Article
Publication Year
2012
Publication Title
Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD
Publication Citation
IEEE Electron Device Letters, v. 33, (8), August 2012, p. 1123-1125
Publication ID
1783.1-57527
Publication Type
Article
Publication Year
2012
Publication Title
High-Performance Inverted In0.53Ga0.47As MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD
Publication Citation
IEEE Electron Device Letters, v.33, (9), 2012, Sept, p. 1246-1248
Publication ID
1783.1-57528
Publication Type
Article
Publication Year
2012
Publication Title
Inverted-Type InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm
Publication Citation
Applied Physics Express, v.5, (10), 2012, Oct, article number 104201
Publication ID
1783.1-57529
Publication Type
Article
Publication Year
2012
Publication Title
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
Publication Citation
Optics letters, v. 37, (19), 1 October 2012, Pages 4035-4037
Publication ID
1783.1-57530
Publication Type
Article
Publication Year
2012
Publication Title
30-nm Inverted In0.53Ga0.47As MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain
Publication Citation
IEEE Electron Device Letters, v. 33, (10), October 2012, p. 1384-1386
Publication ID
1783.1-57525
Publication Type
Article
Publication Year
2012
Publication Title
In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD
Publication Citation
Physica Status Solidi. A, Applications and Materials Science, v. 209, (7), July 2012, p. 1380-1383
Publication ID
1783.1-90252
Publication Type
Conference paper
Publication Year
2017
Publication Title
Distinguished Student Paper: Fully‐Integrated Active Matrix Programmable UV and Blue Micro‐LED Display System‐on‐Panel (SoP)
Publication Citation
Digest of Technical Papers - SID International Symposium, v. 48, (1), June 2017, p. 358-361
Publication ID
1783.1-85723
Publication Type
Conference paper
Publication Year
2017
Publication Title
InAs/InAlGaAs quantum Dot-on-Silicon microdisk lasers Operating at 1.55 μm
Publication Citation
Optics InfoBase Conference Papers, v. Part F41-CLEO_SI 2017, 2017
Publication ID
1783.1-85547
Publication Type
Conference paper
Publication Year
2017
Publication Title
Sub-mA Threshold 1.3 µm CW Lasing from Electrically Pumped Micro-rings Grown on (001) Si
Publication Citation
Optics InfoBase Conference Papers, v. Part F43-CLEO_AT 2017, 2017
Publication ID
1783.1-90163
Publication Type
Conference paper
Publication Year
2017
Publication Title
Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon
Publication Citation
European Conference on Optical Communication, ECO, v. 2017-September, April 2018, p. 1-3
Publication ID
1783.1-91857
Publication Type
Conference paper
Publication Year
2017
Publication Title
InP/InGaAs nano-ridge array on exact (001) silicon substrate emitting at telecommunication wavelengths
Publication Citation
The 44 th International Symposium on Compound Semiconductors (ISCS 2017) and The 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017) :Compound Semiconductor Week (CSW 2017), Berlin, 14-18 May 2017
Publication ID
1783.1-44378
Publication Type
Article
Publication Year
2011
Publication Title
A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
Publication Citation
Applied physics letters, v. 99, (22), 2011, article number 221917
Publication ID
1783.1-86096
Publication Type
Conference paper
Publication Year
2017
Publication Title
Fully-Integrated AMLED Micro Display System With a Hybrid Voltage Regulator
Publication Citation
2017 IEEE Asian Solid-State Circuits Conference, A-SSCC 2017 - Proceedings, v. 2017-January, December 2017, p. 277-280
Publication ID
1783.1-19283
Publication Type
Conference paper
Publication Year
2007
Publication Title
Low noise distributed amplifier using composite-channel Al <sub>0.3</sub>Ga0.7N/Al<sub>0.05</sub>Ga<sub>0.95</sub>N/GaN HEMTs
Publication Citation
IET Conference Publications, (529 CP), 2007, p. 513-519
Publication ID
1783.1-16228
Publication Type
Conference paper
Publication Year
2009
Publication Title
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power
Publication Citation
36th International Symposium on Compound Semiconductors, Santa Barbara, USA, Aug 30 - Sept 2, 2009
Publication ID
1783.1-48132
Publication Type
Conference paper
Publication Year
2009
Publication Title
GaN Based Active Matrix Light Emitting Diode Array by Flip-Chip Technology
Publication Citation
AOE 2008: ASIA OPTICAL FIBER COMMUNICATION AND OPTOELECTRONIC EXPOSITION AND CONFERENCE, 2009
Publication ID
1783.1-48114
Publication Type
Conference paper
Publication Year
2009
Publication Title
GaN-based Monolithic LED Micro-arrays
Publication Citation
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, p. 730-731
Publication ID
1783.1-22769
Publication Type
Conference paper
Publication Year
2008
Publication Title
Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistor amplifier current collapse
Publication Citation
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1090-1093
Publication ID
1783.1-39283
Publication Type
Conference paper
Publication Year
2010
Publication Title
In situ monitoring of GaAs grown on Si(100) by Metal Organic Chemical Vapor Deposition
Publication Citation
15th International Conference on MOVPE, Lake Tahoe, Navada, USA, May 23-28, 2010
Publication ID
1783.1-39431
Publication Type
Conference paper
Publication Year
2010
Publication Title
Lamb-wave UV-sensors Fabricated with GaN-based Thin Films on Silicon Substrates
Publication Citation
International Workshop on Nitride Semiconductors, Tampa, Florida, USA, September 19-24, 2010
Publication ID
1783.1-39527
Publication Type
Conference paper
Publication Year
2010
Publication Title
III-Nitride Devices on Silicon Substrates by MOCVD
Publication Citation
IEEE 2010 Lester Eastman Conference on High Performance Devices (LEC), RPI, Troy, NY, USA, August 3-5, 2010
Publication ID
1783.1-22802
Publication Type
Conference paper
Publication Year
2008
Publication Title
Transient leakage current technique for MIS HEMT (A12O3/AlGaN/GaN) dielectric semiconductor interface property characterization
Publication Citation
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1440-1442
Publication ID
1783.1-34707
Publication Type
Article
Publication Year
2011
Publication Title
Material characteristics of InGaN based light emitting diodes grown on porous Si substrates
Publication Citation
Journal of Crystal Growth, v. 315, (1), 2011, Jan, p. 238-241
Publication ID
1783.1-33291
Publication Type
Article
Publication Year
2011
Publication Title
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD
Publication Citation
Chinese Physics Letters, v. 28, (5), May 2011, article number 057102
Publication ID
1783.1-33292
Publication Type
Article
Publication Year
2011
Publication Title
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
Publication Citation
Chinese Physics, v. 20, (6), June 2011, article number 068502
Publication ID
1783.1-33293
Publication Type
Article
Publication Year
2011
Publication Title
Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
Publication Citation
IEEE journal of quantum electronics, v. 47, (7), July 2011, p. 899-906
Publication ID
1783.1-33294
Publication Type
Article
Publication Year
2011
Publication Title
Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD
Publication Citation
IEEE electron device letters, v. 32, (9), September 2011, p. 1224-1226
Publication ID
1783.1-33295
Publication Type
Article
Publication Year
2011
Publication Title
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper
Publication Citation
Optics express, v. 19, (14), July 2011, p. A956-A961
Publication ID
1783.1-22268
Publication Type
Conference paper
Publication Year
2008
Publication Title
Epitaxial lateral overgrowth of GaN-based light emitting diodes on SiO <sub>2</sub> nanorod-array patterned sapphire substrates by MOCVD
Publication Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 7135, 2008
Publication ID
1783.1-37320
Publication Type
Conference paper
Publication Year
2008
Publication Title
Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
Publication Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 5, (6), 2008, p. 1892-1894
Publication ID
1783.1-66221
Publication Type
Conference paper
Publication Year
2011
Publication Title
InAlAs/InGaAs Metamorphic HEMT and MOS-HEMT with Regrown Source/drain by MOCVD
Publication Citation
69th Annual Device Research Conference, Santa Barbara, USA, 2011, Article number 5994437, p. 107-108
Publication ID
1783.1-40119
Publication Type
Conference paper
Publication Year
2010
Publication Title
Light Extraction Enhancement from GaN-based Thin-Film LEDs Grown on Silicon after Substrate Removal Using HNA Solution
Publication Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 7, (7-8), 2010, p. 2171-2173
Publication ID
1783.1-16382
Publication Type
Conference paper
Publication Year
2010
Publication Title
III-Nitride LEDs Grown on Porous Si Substrtes
Publication Citation
15th International Conference on Metal Organic Vapor Phase Epitaxy, Lake Tahoe, USA, May 23-28, 2010
Publication ID
1783.1-16639
Publication Type
Conference paper
Publication Year
2010
Publication Title
Epitaxial growth of III-nitride LEDs on porous Si substrates
Publication Citation
The 11th National MOCVD Conference, Suzhou, China, Jan 13-14, 2010
Publication ID
1783.1-33289
Publication Type
Conference paper
Publication Year
2011
Publication Title
InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD
Publication Citation
The 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978338
Publication ID
1783.1-71666
Publication Type
Conference paper
Publication Year
2011
Publication Title
Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays
Publication Citation
49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, v. 3, 2011, p. 1215-1218
Publication ID
1783.1-17055
Publication Type
Conference paper
Publication Year
2010
Publication Title
Hetero-epitaxy of III-V compounds by MOCVD on silicon substrates
Publication Citation
ECS Transactions, v. 28, (5), 2010, p. 227-231
Publication ID
1783.1-8025
Publication Type
Article
Publication Year
2011
Publication Title
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
Publication Citation
AIP Advances, v. 1, (3), 2011, article number 032132
Publication ID
1783.1-32901
Publication Type
Article
Publication Year
2011
Publication Title
Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
Publication Citation
Science China: Physics, Mechanics and Astronomy, v. 54, (10), 2011, p. 1815-1818
Publication ID
1783.1-65888
Publication Type
Article
Publication Year
2011
Publication Title
Active Matrix Programmable Monolithic Light Emitting Diodes on Silicon (LEDoS) Displays
Publication Citation
Digest of Technical Papers - SID International Symposium, v. 42, (1 June 2011), 2011, Jun, p. 1215-1218
Publication ID
1783.1-40110
Publication Type
Article
Publication Year
2010
Publication Title
Transfer of GaN-Based Light-Emitting Diodes From Silicon Growth Substrate to Copper
Publication Citation
IEEE electron device letters, v. 31, (2), 2010, FEB, p. 132-134
Publication ID
1783.1-36801
Publication Type
Article
Publication Year
2010
Publication Title
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
Publication Citation
Chinese Physics Letters, v. 27, (3), 2010, MAR
Publication ID
1783.1-17251
Publication Type
Article
Publication Year
2010
Publication Title
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
Publication Citation
Applied physics letters, v. 96, (20), 2010, MAY 17, article number 201106
Publication ID
1783.1-17303
Publication Type
Article
Publication Year
2010
Publication Title
Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD
Publication Citation
Science china-physics MECHANICS & ASTRONOMY, v. 53, (9), 2010, SEP, p. 1578-1581
Publication ID
1783.1-83742
Publication Type
Conference paper
Publication Year
2016
Publication Title
Homogeneous and Heterogeneous Integration of GaN-based Light Emitting Diodes and Driving Transistors
Publication Citation
7th IEEE International NAnoelectronics Conference (INEC) 2016, Chengdu, China, May 9-11, 2016
Publication ID
1783.1-83744
Publication Type
Conference paper
Publication Year
2016
Publication Title
1-μm InAs Quantum Dot Micro-disk Lasers Directly Grown on Exact (001) Si
Publication Citation
Conference Digest - IEEE International Semiconductor Laser Conference, December 2016, article number 7765705
Publication ID
1783.1-82682
Publication Type
Conference paper
Publication Year
2016
Publication Title
Efficient Use of Uniform GaN HVLEDs for Small Flicker General Illumination Applications with Coverter-free LED Drivers
Publication Citation
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528729
Publication ID
1783.1-85490
Publication Type
Conference paper
Publication Year
2016
Publication Title
Switching Performance of Quasi-Vertical GaN-Based p-i-n Diodes on Si
Publication Citation
International Workshop on Nitride Semiconductors (IWN 2016), 2-7 October 2016, p. 242-242
Publication ID
1783.1-79554
Publication Type
Conference paper
Publication Year
2016
Publication Title
Room Temperature CW 1.3 μm Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on (001) Si
Publication Citation
2016 Conference on Lasers and Electro-Optics, CLEO 2016, December 2016, article number 7788536
Publication ID
1783.1-76865
Publication Type
Conference paper
Publication Year
2016
Publication Title
Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation
Publication Citation
CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, p. 289-291
Publication ID
1783.1-33049
Publication Type
Article
Publication Year
2010
Publication Title
Determining phonon deformation potentials of hexagonal GaN with stress modulation
Publication Citation
Journal of Applied Physics, v. 108, (12), 2010, article number 123520
Publication ID
1783.1-76858
Publication Type
Conference paper
Publication Year
2016
Publication Title
High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric
Publication Citation
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528765
Publication ID
1783.1-39233
Publication Type
Conference paper
Publication Year
2010
Publication Title
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power
Publication Citation
37th International Symposium on Compound Semiconductors ISCS, Kagawa, Japan, May 30- June 4, 2010
Publication ID
1783.1-39440
Publication Type
Conference paper
Publication Year
2010
Publication Title
MOCVD of Device Structures
Publication Citation
11th National Conference on MOCVD, Suzhou, China, January 13-16, 2010
Publication ID
1783.1-39677
Publication Type
Conference paper
Publication Year
2010
Publication Title
GaN-based Lamb-wave Mass-sensors on Silicon Substrates
Publication Citation
Proceedings of IEEE Sensors, 2010, p. 2008-2011
Publication ID
1783.1-90633
Publication Type
Article
Publication Year
2018
Publication Title
Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate
Publication Citation
OPTICA, v. 5, (5), May 2018, p. 564-569
Publication ID
1783.1-91854
Publication Type
Article
Publication Year
2018
Publication Title
Room temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands
Publication Citation
Optica, v. 5, (8), August 2018, p. 918-923
Publication ID
1783.1-55764
Publication Type
Conference paper
Publication Year
2012
Publication Title
ETB-QW InAs MOSFET with Scaled Body for Improved Electrostatics
Publication Citation
Technical digest - International Electron Devices Meeting, 2012, p. 32.3.1-32.3.4
Publication ID
1783.1-57537
Publication Type
Conference paper
Publication Year
2012
Publication Title
High-Performance AlN/GaN MOSHEMTs with Regrown Ohmic Contacts by MOCVD
Publication Citation
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012, p. 576-578
Publication ID
1783.1-56514
Publication Type
Conference paper
Publication Year
2012
Publication Title
Growth of butt-coupled p-i-n InGaAs waveguide photodetectors by MOCVD
Publication Citation
2012 Electronic Materials Conference, Pennsylvania State University, PA, USA, 20 – 22 June 2012.
Publication ID
1783.1-57516
Publication Type
Conference paper
Publication Year
2012
Publication Title
Improved Crystalline Quality and Light Output Power of GaN-based Light-emitting Diodes Grown on Si Substrate by Buffer Optimization
Publication Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 9, (3-4), 2012, p. 572-575
Publication ID
1783.1-57533
Publication Type
Conference paper
Publication Year
2012
Publication Title
Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance
Publication Citation
27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012, Boston, MA, United States, 23 - 26 April 2012, Code 100649
Publication ID
1783.1-44852
Publication Type
Article
Publication Year
2009
Publication Title
Microbridge tests on gallium nitride thin films
Publication Citation
Journal of micromechanics and microengineering, v. 19, (9), September 2009, article number 095019
Publication ID
1783.1-17756
Publication Type
Article
Publication Year
2009
Publication Title
Improved GaN Grown on Si(111) Substrate Using Ammonia Flow Modulation on SiN (x) Mask Layer by MOCVD
Publication Citation
Science in China Series e-technological sciences, v. 52, (9, Sp. Iss. SI), 2009, Sep, p. 2758-2761
Publication ID
1783.1-17815
Publication Type
Article
Publication Year
2009
Publication Title
Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon
Publication Citation
Applied physics letters, v. 94, (1), 2009, JAN 5, article number 012101
Publication ID
1783.1-18064
Publication Type
Article
Publication Year
2009
Publication Title
Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology
Publication Citation
IEEE journal of selected topics in quantum electronics, v. 15, (4), 2009, JUL-AUG, p. 1298-1302
Publication ID
1783.1-46077
Publication Type
Article
Publication Year
2005
Publication Title
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition
Publication Citation
Journal of Electronic Materials, v. 34, (1), 2005, JAN, p. 112-118
Publication ID
1783.1-2773
Publication Type
Article
Publication Year
2005
Publication Title
Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices
Publication Citation
Journal of applied physics, v. 98, (2), 2005, p. 1-5
Publication ID
1783.1-47420
Publication Type
Article
Publication Year
2005
Publication Title
Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates
Publication Citation
IEEE electron device letters, v. 26, (12), December 2005, p. 870-872
Publication ID
1783.1-20787
Publication Type
Article
Publication Year
2005
Publication Title
AlGaN-GaNHEMTs on patterned silicon (111) substrate
Publication Citation
IEEE electron device letters, v. 26, (3), March 2005, p. 130-132
Publication ID
1783.1-45415
Publication Type
Article
Publication Year
2005
Publication Title
Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
Publication Citation
Journal of Crystal Growth, 272, 1-4, December 2004
Publication ID
1783.1-58423
Publication Type
Conference paper
Publication Year
2013
Publication Title
All-silicon and Epitaxially Grown III-V-on-silicon Photodetectors for On-chip Optical Interconnection Applications
Publication Citation
SPIE Proceedings, v. 8628, March 2013
Publication ID
1783.1-57536
Publication Type
Conference paper
Publication Year
2012
Publication Title
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
Publication Citation
IEEE International Conference on Group IV Photonics, USA, 2012, p. 51-53
Publication ID
1783.1-18132
Publication Type
Article
Publication Year
2009
Publication Title
HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice
Publication Citation
Journal of Crystal Growth, v. 311, (10), 2009, MAY 1, p. 3089-3092
Publication ID
1783.1-60783
Publication Type
Conference paper
Publication Year
2013
Publication Title
Analysis on the CTLM and LTLM Applicability for GaN HEMTs Structure Alloyed Ohmic Contact Resistance Evaluation
Publication Citation
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013, article number 6628128
Publication ID
1783.1-60951
Publication Type
Conference paper
Publication Year
2013
Publication Title
GaN Based Light-emitting Diode on Silicon (LEDoS) Micro-displays for BLU-free Full-color Projector Application
Publication Citation
2013 IEEE Photonics Conference, IPC 2013, 2013, article number 6656489, p. 171-172
Publication ID
1783.1-61184
Publication Type
Conference paper
Publication Year
2013
Publication Title
Effects of Pre-annealed Nickel Contact Layer on LED Device Performance Using NI/AG-based p-type Contacts
Publication Citation
Asia Communications and Photonics Conference, ACP 2013, Beijing; China, 12 November 2013 through 15 November 2013
Publication ID
1783.1-64354
Publication Type
Conference paper
Publication Year
2013
Publication Title
Cost-effective and Eco-friendly LED System-on-a-Chip
Publication Citation
2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013, 2013, article number 7177356, p. 235-238
Publication ID
1783.1-61136
Publication Type
Conference paper
Publication Year
2013
Publication Title
Enhancement-mode AlN/GaN MOSHEMTs Fabricated by Selective Area Regrowth of AlGaN Barrier Layer
Publication Citation
Proceedings of the 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2013), Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 199-202
Publication ID
1783.1-73982
Publication Type
Conference paper
Publication Year
2013
Publication Title
Blue, Green, and Yellow LEDs Grown on Si Substrates
Publication Citation
Asia Communications and Photonics Conference 2013: OSA Technical Digest, Optical Society of America, 2013
Publication ID
1783.1-18150
Publication Type
Article
Publication Year
2009
Publication Title
InP Layer Transfer with Masked Implantation
Publication Citation
Electrochemical and SOLID STATE Letters, v. 12, (4), 2009, p. H149-H150
Publication ID
1783.1-27557
Publication Type
Article
Publication Year
2008
Publication Title
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate
Publication Citation
Journal of Crystal Growth, v. 310, (23), 2008, NOV 15, p. 5170-5174
Publication ID
1783.1-28145
Publication Type
Article
Publication Year
2008
Publication Title
Low-frequency noise properties of double channel AlGaN/GaN HEMTs
Publication Citation
Solid-state electronics, v. 52, (5), 2008, MAY, p. 606-611
Publication ID
1783.1-24601
Publication Type
Article
Publication Year
2008
Publication Title
Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces
Publication Citation
Journal of lightwave technology, v. 26, (9-12), 2008, MAY-JUN, p. 1455-1463
Publication ID
1783.1-24712
Publication Type
Article
Publication Year
2008
Publication Title
Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD
Publication Citation
IEEE electron device letters, v. 29, (6), 2008, JUN, p. 561-564
Publication ID
1783.1-18375
Publication Type
Article
Publication Year
2008
Publication Title
Growth and characterizations of GaN-based LEDs grown on wet-etched stripe-patterned sapphire substrates
Publication Citation
Journal of Electronic Materials, v. 37, (10), 2008, OCT, p. 1560-1564
Publication ID
1783.1-64352
Publication Type
Conference paper
Publication Year
2014
Publication Title
Through Silicon Underfill Dispensing for 3D Die/Interposer Stacking
Publication Citation
Proceedings - Electronic Components and Technology Conference, September 2014, article number 6897397, p. 919-924
Publication ID
1783.1-66326
Publication Type
Conference paper
Publication Year
2014
Publication Title
Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications
Publication Citation
The 4th International Power Supply on Chip Workshop (PwrSoC2014), Boston, Massachusetts, USA, 6-8 October 2014
Publication ID
1783.1-79441
Publication Type
Conference paper
Publication Year
2014
Publication Title
Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO<sub>2</sub> Patterned GaN/Si Templates
Publication Citation
The 56th Electronic Materials Conference (EMC 2014), The University of California, Santa Barbara, USA, 25-27 June 2014
Publication ID
1783.1-6262
Publication Type
Article
Publication Year
2008
Publication Title
Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template
Publication Citation
Applied physics letters, v. 93, (8), 2008, AUG 25, article number 081108
Publication ID
1783.1-46533
Publication Type
Article
Publication Year
2007
Publication Title
Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse
Publication Citation
IEEE electron device letters, v. 28, (3), 2007, MAR, p. 189-191
Publication ID
1783.1-45402
Publication Type
Article
Publication Year
2007
Publication Title
MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Publication Citation
Chinese Physics, v. 16, (11), 2007, NOV, p. 3494-3497
Publication ID
1783.1-19093
Publication Type
Article
Publication Year
2007
Publication Title
Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
Publication Citation
Journal of Electronic Materials, v. 36, (9), 2007, SEP, p. 1144-1148
Publication ID
1783.1-18598
Publication Type
Article
Publication Year
2007
Publication Title
Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers
Publication Citation
Applied physics letters, v. 90, (21), 2007, MAY 21, Article number 213506
Publication ID
1783.1-18599
Publication Type
Article
Publication Year
2007
Publication Title
1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs
Publication Citation
Microwave and optical technology letters, v. 49, (6), 2007, JUN, p. 1360-1362
Publication ID
1783.1-18764
Publication Type
Article
Publication Year
2007
Publication Title
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
Publication Citation
IEEE electron device letters, v. 28, (5), 2007, MAY, p. 328-331
Publication ID
1783.1-65889
Publication Type
Conference paper
Publication Year
2014
Publication Title
Integration Scheme Toward LED System-on-a-Chip (SoC)
Publication Citation
Solid-State and Organic Lighting, SOLED 2014; Energy Change Institute, Australian National UniversityCanberra, Australia, 2 December 2014 through 5 December 2014
Publication ID
1783.1-76869
Publication Type
Conference paper
Publication Year
2015
Publication Title
GaAs/In0.2Ga0.8As Fin-Array-Esaki Tunnel Diodes Fabricated on (001) Silicon by Aspect Ratio Trapping
Publication Citation
2015 International Conference on Solid State Devices and Materials, Sapporo, Japan, 27-30 September 2015
Publication ID
1783.1-73169
Publication Type
Conference paper
Publication Year
2015
Publication Title
Buffer Structure Optimization of Monolithically Integrated HEMT-LED Using a Metal-Interconnection-Free Integration Scheme
Publication Citation
57th Electronic Materials Conference (EMC), Columbus, Ohio, USA, 24-26 June 2015
Publication ID
1783.1-18950
Publication Type
Article
Publication Year
2007
Publication Title
A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Publication Citation
IEEE transactions on microwave theory and techniques, v. 55, (1), 2007, JAN, p. 23-29
Publication ID
1783.1-19007
Publication Type
Article
Publication Year
2007
Publication Title
Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate
Publication Citation
Journal of applied physics, v. 102, (10), 2007, NOV 15, article number 104508
Publication ID
1783.1-18416
Publication Type
Article
Publication Year
2007
Publication Title
Device isolation by plasma treatment for planar integration of enhancement/depletion-mode AlGaN/GaN high electron mobility transistors
Publication Citation
Japanese Journal of Applied Physics, v. 46, pt. 1, no. 4B, 24 Apr 2007, p. 2330-2333
Publication ID
1783.1-32636
Publication Type
Article
Publication Year
2007
Publication Title
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
Publication Citation
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 204, (6), 2007, JUN, p. 2023-2027
Publication ID
1783.1-35823
Publication Type
Article
Publication Year
2007
Publication Title
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
Publication Citation
Journal of Crystal Growth, v. 298, (Sp. Iss. SI), 2007, JAN, p. 725-730
Publication ID
1783.1-45765
Publication Type
Article
Publication Year
2007
Publication Title
Metamorphic heterostructure InP/GaAsSb/InP HBTs on GaAs substrates by MOCVD
Publication Citation
IEEE electron device letters, v. 28, (7), 2007, JUL, p. 539-542
Publication ID
1783.1-18953
Publication Type
Article
Publication Year
2007
Publication Title
DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
Publication Citation
IEEE transactions on electron devices, v. 54, (1), January 2007
Publication ID
1783.1-48113
Publication Type
Article
Publication Year
2006
Publication Title
GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS
Publication Citation
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 371-378
Publication ID
1783.1-83278
Publication Type
Conference paper
Publication Year
2016
Publication Title
Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-first Process
Publication Citation
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528722
Publication ID
1783.1-86110
Publication Type
Conference paper
Publication Year
2016
Publication Title
Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric
Publication Citation
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Publication ID
1783.1-76843
Publication Type
Conference paper
Publication Year
2016
Publication Title
Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs
Publication Citation
2016 International Conference on Compound Semiconductor Manufacturing Technology, Miami, Florida, USA, 16-19 May 2016
Publication ID
1783.1-76849
Publication Type
Conference paper
Publication Year
2016
Publication Title
Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects
Publication Citation
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, June 26-30, 2016
Publication ID
1783.1-88687
Publication Type
Article
Publication Year
2018
Publication Title
Heterointerface Study of InAs/GaSb Nanoridge Heterostructures Grown by Metal Organic Chemical Vapor Deposition on V-grooved Si (0 0 1) Substrates
Publication Citation
Journal of Crystal Growth, v. 484, February 2018, p. 12-16
Publication ID
1783.1-89533
Publication Type
Article
Publication Year
2018
Publication Title
Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors
Publication Citation
Semiconductor Science and Technology, v. 33, (4), April 2018, article number 045005
Publication ID
1783.1-88987
Publication Type
Article
Publication Year
2018
Publication Title
A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor
Publication Citation
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 394-396
Publication ID
1783.1-89753
Publication Type
Article
Publication Year
2018
Publication Title
Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High-k ZrO<sun>2</sub> Gate Dielectric
Publication Citation
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 405-408
Publication ID
1783.1-90632
Publication Type
Article
Publication Year
2018
Publication Title
Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters
Publication Citation
JOURNAL OF APPLIED PHYSICS, v. 123, (19), May 2018, article number 193104
Publication ID
1783.1-31602
Publication Type
Article
Publication Year
2006
Publication Title
Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique
Publication Citation
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 203, (7), 2006, MAY, p. 1712-1715
Publication ID
1783.1-85581
Publication Type
Conference paper
Publication Year
2016
Publication Title
Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device
Publication Citation
International Workshop on Nitride Semiconductors (IWN 2016), Orlando, Florida, October 2-7, 2016
Publication ID
1783.1-79427
Publication Type
Conference paper
Publication Year
2015
Publication Title
Fabrication of Large Area Flip-chip High Voltage LEDs with 2 Micron Gap
Publication Citation
1th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Publication ID
1783.1-76870
Publication Type
Conference paper
Publication Year
2015
Publication Title
1.3 µm Photoluminescence from InAs/GaAs Quantum Dots on CMOS-compatible (001) Silicon by Metal-organic Chemical Vapor Deposition
Publication Citation
International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Hokkaido, Japan, 27-30 September 2015
Publication ID
1783.1-47470
Publication Type
Article
Publication Year
2006
Publication Title
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Publication Citation
IEEE transactions on electron devices, v. 53, (6), 2006, JUN, p. 1474-1477
Publication ID
1783.1-19783
Publication Type
Article
Publication Year
2006
Publication Title
Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage
Publication Citation
IEICE transactions on electronics, v. E89C, (7), 2006, JUL, p. 1025-1030
Publication ID
1783.1-19866
Publication Type
Article
Publication Year
2006
Publication Title
AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
Publication Citation
IEEE electron device letters, v. 27, (1), 2006, JAN, p. 10-12
Publication ID
1783.1-19964
Publication Type
Article
Publication Year
2006
Publication Title
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors
Publication Citation
Applied physics letters, v. 88, (12), 2006, MAR 20
Publication ID
1783.1-19995
Publication Type
Article
Publication Year
2006
Publication Title
Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN
Publication Citation
Thin solid films, v. 515, (4), 2006, DEC 5, p. 2111-2115
Publication ID
1783.1-20016
Publication Type
Article
Publication Year
2006
Publication Title
Enhancement-mode Si3N4/AlGaN/GaN MISHFETs
Publication Citation
IEEE electron device letters, v. 27, (10), 2006, OCT, p. 793-795
Publication ID
1783.1-20099
Publication Type
Article
Publication Year
2006
Publication Title
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
Publication Citation
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2223-2230
Publication ID
1783.1-20108
Publication Type
Article
Publication Year
2006
Publication Title
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Publication Citation
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2207-2215
Publication ID
1783.1-19697
Publication Type
Article
Publication Year
2006
Publication Title
Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
Publication Citation
Applied physics letters, v. 88, (4), 2006, JAN 23, article number 041913
Publication ID
1783.1-19733
Publication Type
Article
Publication Year
2006
Publication Title
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Publication Citation
IEEE electron device letters, v. 27, (8), 2006, AUG, p. 633-635
Publication ID
1783.1-46420
Publication Type
Article
Publication Year
2005
Publication Title
Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
Publication Citation
Applied physics letters, v. 86, (10), 2005, MAR 7, article number 101903
Publication ID
1783.1-47659
Publication Type
Article
Publication Year
2005
Publication Title
Highly linear A1(0.3)Ga(0.7)N-A1(0.05)Ga(0.95)N-GaN composite-channel HEMTs
Publication Citation
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 145-147
Publication ID
1783.1-20520
Publication Type
Article
Publication Year
2005
Publication Title
Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Publication Citation
IEEE electron device letters, v. 26, (8), 2005, AUG, p. 521-523
Publication ID
1783.1-91147
Publication Type
Conference paper
Publication Year
2016
Publication Title
Multi-layer InAs/InAlGaAs quantum dots embedded into InP on Si (001) substrate for dislocation filtering
Publication Citation
18th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XVIII), San Diego, California, USA, 10-15 July 2016
Publication ID
1783.1-91858
Publication Type
Conference paper
Publication Year
2016
Publication Title
InP Nanowire Arrays with Embedded InGaAs Quantum wells Grown on Patterned (001) Si Substrates
Publication Citation
18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, 10-15 July 2016
Publication ID
1783.1-76871
Publication Type
Conference paper
Publication Year
2015
Publication Title
Orderly Array of In-Plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-Free GaAs Thin Films
Publication Citation
CS MANTECH 2015 - 2015 International Conference on Compound Semiconductor Manufacturing Technology, 2015, p. 71-74
Publication ID
1783.1-20621
Publication Type
Article
Publication Year
2005
Publication Title
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Publication Citation
Journal of applied physics, v. 97, (5), 2005, MAR 1
Publication ID
1783.1-20681
Publication Type
Article
Publication Year
2005
Publication Title
AlGaN-GaN double-channel HEMTs
Publication Citation
IEEE transactions on electron devices, v. 52, (4), 2005, APR, p. 438-446
Publication ID
1783.1-20776
Publication Type
Article
Publication Year
2005
Publication Title
III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films
Publication Citation
Applied physics letters, v. 86, (3), 2005, JAN 17
Publication ID
1783.1-20916
Publication Type
Article
Publication Year
2005
Publication Title
Doping concentration and structural dependences of the thermal stability of the 2DEG in GaN-based high-electron-mobility transistor structures
Publication Citation
Japanese Journal of Applied Physics, v. 44, pt. 2 no. 1-7, 2005, p. L21-L23
Publication ID
1783.1-20940
Publication Type
Article
Publication Year
2005
Publication Title
Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor
Publication Citation
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 432-434
Publication ID
1783.1-20950
Publication Type
Article
Publication Year
2005
Publication Title
Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates
Publication Citation
IEEE photonics technology letters, v. 17, (9), 2005, SEP, p. 1812-1814
Publication ID
1783.1-12749
Publication Type
Conference paper
Publication Year
2004
Publication Title
Effect of different SiN x Passivation and Their Strain on the Reliability of GaN-Based HEMT Structures
Publication Citation
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25
Publication ID
1783.1-14572
Publication Type
Conference paper
Publication Year
2004
Publication Title
GaN-Based Blue-Light-Emitting Diodes Grown and Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy
Publication Citation
12th Int. Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII), Maui, Hawaii, USA, May 30-June 4
Publication ID
1783.1-41411
Publication Type
Conference paper
Publication Year
2004
Publication Title
Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT
Publication Citation
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25 2004
Publication ID
1783.1-9375
Publication Type
Conference paper
Publication Year
2004
Publication Title
Thermal transfer of excess carriers from the GaN barrier to the InGaN quantum dots for efficient electroluminescence
Publication Citation
AIP Conference Proceedings Volume 772, page 765 (2005), the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, USA, 26-30 July 2004,
Publication ID
1783.1-14896
Publication Type
Conference paper
Publication Year
2004
Publication Title
Dual wavelength emission InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
Publication Citation
12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12), Hawaii, USA, 30 May - 4 June 2004
Publication ID
1783.1-43747
Publication Type
Conference paper
Publication Year
2003
Publication Title
Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs
Publication Citation
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, p. 196-199
Publication ID
1783.1-20960
Publication Type
Article
Publication Year
2005
Publication Title
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Publication Citation
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 435-437
Publication ID
1783.1-21084
Publication Type
Article
Publication Year
2005
Publication Title
Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy
Publication Citation
Acta physica Sinica, v. 54, (11), 2005, NOV, p. 5344-5349
Publication ID
1783.1-21861
Publication Type
Article
Publication Year
2004
Publication Title
Efficient wet etching of GaN and p-GaN assisted with chopped UV source
Publication Citation
Superlattices and microstructures, v. 35, (1-2), 2004, JAN-FEB, p. 45-57
Publication ID
1783.1-76848
Publication Type
Conference paper
Publication Year
2015
Publication Title
Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots Grown by Metal-organic Chemical Vapor Deposition
Publication Citation
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, Sapporo, 2015, 2015, p. 290-291
Publication ID
1783.1-73055
Publication Type
Conference paper
Publication Year
2015
Publication Title
A Low Substrate Loss, Monolithically Integrated Power Inductor for Compact LED Drivers
Publication Citation
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 53-56
Publication ID
1783.1-68476
Publication Type
Conference paper
Publication Year
2014
Publication Title
Monolithic Integration of III-nitride LEDs and Driver HEMT Transistors by MOCVD
Publication Citation
Asia Communications and Photonics Conference, ACPC 2014, November 2014
Publication ID
1783.1-44119
Publication Type
Conference paper
Publication Year
2012
Publication Title
Resistivity control in unintentionally doped GaN films grown on Si (111) substrates by MOCVD
Publication Citation
Advanced materials research, v. 415, 2012, p. 1959-1963
Publication ID
1783.1-57538
Publication Type
Conference paper
Publication Year
2012
Publication Title
30nm Enhancement-mode In0.53Ga0.47As MOSFETs on Si Substrates Grown by MOCVD Exhibiting High Transconductance and Low On-resistance
Publication Citation
2012 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2012, Article number 6479153, pp. 32.5.1-32.5.4
Publication ID
1783.1-17070
Publication Type
Conference paper
Publication Year
2010
Publication Title
Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD
Publication Citation
2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, 2010, p. 68-71
Publication ID
1783.1-33288
Publication Type
Conference paper
Publication Year
2010
Publication Title
High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD
Publication Citation
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1377-1379
Publication ID
1783.1-274
Publication Type
Conference paper
Publication Year
2010
Publication Title
0.3-μm gate-length metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
Publication Citation
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1374-1376
Publication ID
1783.1-46682
Publication Type
Conference paper
Publication Year
2009
Publication Title
Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation
Publication Citation
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, p. 234-235
Publication ID
1783.1-37345
Publication Type
Conference paper
Publication Year
2009
Publication Title
Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications
Publication Citation
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2009, p. 136-139
Publication ID
1783.1-8269
Publication Type
Conference paper
Publication Year
2008
Publication Title
Investigation of the natural degradation of green LEDs
Publication Citation
2008 Electronic Material Conference (EMC2008), University California, Santa Barbara, CA
Publication ID
1783.1-19289
Publication Type
Conference paper
Publication Year
2007
Publication Title
Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)
Publication Citation
ECS Transactions, v. 11, (5), 2007, p. 225-230
Publication ID
1783.1-19349
Publication Type
Conference paper
Publication Year
2006
Publication Title
Effects of NO annealing on the characteristics of GaN MIS capacitor
Publication Citation
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, p. 561-564
Publication ID
1783.1-12325
Publication Type
Conference paper
Publication Year
2006
Publication Title
Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique
Publication Citation
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Publication ID
1783.1-11929
Publication Type
Conference paper
Publication Year
2006
Publication Title
Core Technologies for III-Nitride Integrated Microsensors
Publication Citation
6th Emerging Information Technology Conference, Richardson, Texas, USA, Aug 10-13, 2006
Publication ID
1783.1-9804
Publication Type
Conference paper
Publication Year
2006
Publication Title
GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching
Publication Citation
21th Meeting of the Electrochemical Society, Chicago, Illinois, May 6-10, 2007
Publication ID
1783.1-9921
Publication Type
Conference paper
Publication Year
2006
Publication Title
Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse
Publication Citation
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2007, p. 257-260
Publication ID
1783.1-93538
Publication Type
Conference paper
Publication Year
2006
Publication Title
Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor
Publication Citation
Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 2006, article number 4099867, p. 105-108
Publication ID
1783.1-27638
Publication Type
Conference paper
Publication Year
2005
Publication Title
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits
Publication Citation
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 771-774
Publication ID
1783.1-27675
Publication Type
Conference paper
Publication Year
2005
Publication Title
GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors
Publication Citation
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 298-301
Publication ID
1783.1-37285
Publication Type
Conference paper
Publication Year
2005
Publication Title
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth
Publication Citation
Physica Status Solidi C: Conferences, v. 2, (7), 2005, p. 2663-2667
Publication ID
1783.1-37589
Publication Type
Conference paper
Publication Year
2005
Publication Title
A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
Publication Citation
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2005, p. 385-388
Publication ID
1783.1-20499
Publication Type
Conference paper
Publication Year
2005
Publication Title
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Publication Citation
Device Research Conference - Conference Digest, DRC, v. 2005, 2005, p. 179-180
Publication ID
1783.1-11535
Publication Type
Conference paper
Publication Year
2005
Publication Title
MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
Publication Citation
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.243, April 24-27, 2006.
Publication ID
1783.1-11161
Publication Type
Conference paper
Publication Year
2005
Publication Title
AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6)
Publication Citation
Bremen, Germany, Aug. 28-Sep. 2, 2005
Publication ID
1783.1-11211
Publication Type
Conference paper
Publication Year
2005
Publication Title
Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique
Publication Citation
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Publication ID
1783.1-11604
Publication Type
Conference paper
Publication Year
2005
Publication Title
High-Performance Metamorphic InP/GaAsSb/InP “Type-II” DHBTs Grown on GaAs Substrates
Publication Citation
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.157, April 24-27, 2006
Publication ID
1783.1-38103
Publication Type
Conference paper
Publication Year
2005
Publication Title
GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS
Publication Citation
Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, v. 1, 2005, p. 887-890
Publication ID
1783.1-51179
Publication Type
Conference paper
Publication Year
2005
Publication Title
Monolithic integrated c-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs
Publication Citation
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 1112-1115
Publication ID
1783.1-14531
Publication Type
Conference paper
Publication Year
2005
Publication Title
Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT
Publication Citation
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Publication ID
1783.1-21243
Publication Type
Conference paper
Publication Year
2004
Publication Title
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity
Publication Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 811-814
Publication ID
1783.1-44602
Publication Type
Conference paper
Publication Year
2004
Publication Title
Thermally activated carriers transfer process for the success of InGaN/GaN multi-quantum well light emitting devices
Publication Citation
The 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, JUL 26-30, 2004, v. 772, 2005, p. 765-766
Publication ID
1783.1-38131
Publication Type
Conference paper
Publication Year
2004
Publication Title
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
Publication Citation
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 2257-2260
Publication ID
1783.1-8330
Publication Type
Conference paper
Publication Year
2008
Publication Title
High quality GaAs film on Si (100) with excellent surface morphology grown by MOCVD
Publication Citation
2008 Electronic Material Conference (EMC2008), University California, Santa Barbara, CA
Publication ID
1783.1-8573
Publication Type
Conference paper
Publication Year
2008
Publication Title
AlInAs/GaInAs mHEMTs on Silicon Substrates Grown by MOCVD
Publication Citation
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 723-726
Publication ID
1783.1-8848
Publication Type
Conference paper
Publication Year
2008
Publication Title
Metamorphic AlInAs/GaInAs HEMTs on Si Substrates by MOCVD
Publication Citation
14th International Conference Metalorganic Vapor Phase Epitaxy IC MOVPE, Metz, France
Publication ID
1783.1-8899
Publication Type
Conference paper
Publication Year
2008
Publication Title
Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD
Publication Citation
2008 Electronic Material Conference (EMC2008), CA, United States, 26 - 27 June 2008
Publication ID
1783.1-27582
Publication Type
Conference paper
Publication Year
2007
Publication Title
Fabrication of position-controllable GaN nanostructures
Publication Citation
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 985-988
Publication ID
1783.1-76861
Publication Type
Conference paper
Publication Year
2015
Publication Title
Off-state Drain Leakage Reduction by Post Metallization Annealing for Al<sub>2</sub>O<sub>3</sub>/GaN/AlGaN/GaN MOSHEMTs on Silicon
Publication Citation
The 42nd International Symposium on Compound Semiconductors, Santa Barbara, Santa Barbara, California, USA, 28 June - 2 July 2015
Publication ID
1783.1-82687
Publication Type
Conference paper
Publication Year
2015
Publication Title
Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA
Publication Citation
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Publication ID
1783.1-76853
Publication Type
Conference paper
Publication Year
2015
Publication Title
Control of Threshold Voltage in Ultrathin-barrier AlGaN/GaN based MISHEMTs with Low-frequency SiNx Gate Dielectric and Al2O3 Interfacial Layer
Publication Citation
The 11th International Conference on Nitride Semiconductors (ICNS 2015), Beijing, China, 30 August - 4 September 2015
Publication ID
1783.1-76859
Publication Type
Conference paper
Publication Year
2015
Publication Title
Improved Performance of AlGaN/GaN HEMTs by O2-plasma and HCl Surface Treatment
Publication Citation
The 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, 30 August - 4 September 2015
Publication ID
1783.1-65810
Publication Type
Conference paper
Publication Year
2015
Publication Title
Monolithically Integrated Drivers for Eco-friendly LED System-on-a-Chip Applications
Publication Citation
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, March 2015 , article number 7061080
Publication ID
1783.1-46198
Publication Type
Conference paper
Publication Year
2007
Publication Title
Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure
Publication Citation
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 1045-1048
Publication ID
1783.1-12098
Publication Type
Conference paper
Publication Year
2007
Publication Title
Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Publication Citation
Proceedings of International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, 2007, p. 313-315
Publication ID
1783.1-44592
Publication Type
Conference paper
Publication Year
2006
Publication Title
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch
Publication Citation
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2312-2316
Publication ID
1783.1-44699
Publication Type
Conference paper
Publication Year
2006
Publication Title
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Publication Citation
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2368-2372
Publication ID
1783.1-21423
Publication Type
Article
Publication Year
2004
Publication Title
Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN
Publication Citation
Applied physics letters, v. 84, (10), 2004, MAR 8, p. 1710-1712
Publication ID
1783.1-48115
Publication Type
Article
Publication Year
2004
Publication Title
GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy
Publication Citation
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 327-332
Publication ID
1783.1-48127
Publication Type
Article
Publication Year
2004
Publication Title
GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition
Publication Citation
Applied physics letters, v. 85, (19), 2004, NOV 8, p. 4415-4417
Publication ID
1783.1-47090
Publication Type
Article
Publication Year
2004
Publication Title
Characterization of GaN grown on patterned Si(111) substrates
Publication Citation
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 489-495
Publication ID
1783.1-47428
Publication Type
Article
Publication Year
2004
Publication Title
Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification
Publication Citation
Applied physics letters, v. 85, (22), 2004, NOV 29, p. 5248-5250
Publication ID
1783.1-15220
Publication Type
Article
Publication Year
2004
Publication Title
Al0.10Ga0.90As-GaAs microcoolers
Publication Citation
IEEE Electron Device Letters, v. 25, (6), 2004, June, p. 345-347
Publication ID
1783.1-22487
Publication Type
Article
Publication Year
2003
Publication Title
AlGaAs superlattice microcoolers
Publication Citation
Applied physics letters, v. 83, (2), 2003, JUL 14, p. 374-376
Publication ID
1783.1-37249
Publication Type
Article
Publication Year
2003
Publication Title
Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures
Publication Citation
Physica Status Solidi C, Vol. 0, (7), 2003, p. 2400-2403
Publication ID
1783.1-93553
Publication Type
Article
Publication Year
2002
Publication Title
Charactersization of a novel GaAs-based microwave optical switch
Publication Citation
Solid-State Electronics, v. 46, (10), October 2002, p. 1573-1577
Publication ID
1783.1-33296
Publication Type
Article
Publication Year
2001
Publication Title
OMVPE growth of P-type GaN using solution Cp2Mg
Publication Citation
Journal of Electronic Materials, v. 30, (11), 2001, NOV, p. 1382-1386
Publication ID
1783.1-53634
Publication Type
Article
Publication Year
2001
Publication Title
Study of Schottky barrier of Ni on p-GaN
Publication Citation
Applied physics letters, v. 79, (27), 2001, DEC 31, p. 4536-4538
Publication ID
1783.1-83623
Publication Type
Article
Publication Year
2017
Publication Title
Electrically Pumped Continuous Wave Quantum Dot Lasers Epitaxially Grown on Patterned, on-axis (001) Si
Publication Citation
Optics Express, v. 25, (4), February 2017, p. 3927-3934
Publication ID
1783.1-24070
Publication Type
Article
Publication Year
2000
Publication Title
Characteristic temperature study of GaAsP-AlGaAs tensile strained quantum well lasers
Publication Citation
Journal of Applied Physics, v. 88, (9), 2000, p. 5400-5409
Publication ID
1783.1-47172
Publication Type
Conference paper
Publication Year
2006
Publication Title
A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits
Publication Citation
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, Article number 4110036, p. 261-264
Publication ID
1783.1-88936
Publication Type
Article
Publication Year
2017
Publication Title
Epitaxial Growth of Highly Mismatched III-V Materials on (001) Silicon for Electronics and Optoelectronics
Publication Citation
Progress in Crystal Growth and Characterization of Materials, v.63, (4), December 2017, p. 105-120
Publication ID
1783.1-83631
Publication Type
Article
Publication Year
2017
Publication Title
1.55 μm Band Low-threshold, Continuous-wave Lasing From InAs/InAlGaAs Quantum Dot Microdisks
Publication Citation
Optics Letters, v. 42, (4), February 2017, p. 679-682
Publication ID
1783.1-85863
Publication Type
Article
Publication Year
2017
Publication Title
Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN
Publication Citation
Semiconductor Science and Technology, v. 32, (7), June 2017, article number 075011
Publication ID
1783.1-84120
Publication Type
Article
Publication Year
2017
Publication Title
Fin-array Tunneling Trigger with Tunable Hysteresis on (001) Silicon Substrate
Publication Citation
IEEE Electron Device Letters, v. 38, (5), May 2017, article number 7888930, p. 556-559
Publication ID
1783.1-85806
Publication Type
Article
Publication Year
2017
Publication Title
Fully-integrated Active Matrix Programmable UV and Blue Micro-LED Display System-on-Panel (SoP)
Publication Citation
Journal of the Society for Information Display, v. 25, (4), April 2017, p. 240-248
Publication ID
1783.1-86866
Publication Type
Article
Publication Year
2017
Publication Title
1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si
Publication Citation
Optica, v. 4, (8), August 2017, p. 940-944
Publication ID
1783.1-83804
Publication Type
Article
Publication Year
2017
Publication Title
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
Publication Citation
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7805226, p. 832-839
Publication ID
1783.1-81831
Publication Type
Article
Publication Year
2017
Publication Title
Self-organized InAs/InAlGaAs Quantum Dots as Dislocation Filters for InP Films on (001) Si
Publication Citation
Journal of Crystal Growth, v. 464, 15 April 2017, p. 28-32
Publication ID
1783.1-83802
Publication Type
Article
Publication Year
2017
Publication Title
Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison
Publication Citation
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7835614, p. 809-815
Publication ID
1783.1-44128
Publication Type
Conference paper
Publication Year
2012
Publication Title
Growth characteristics of AlGaN/GaN HEMTs on patterned Si (111) substrates using double AIN interlayers by MOCVD
Publication Citation
Advanced materials research, v. 396, 2012, p. 372-375
Publication ID
1783.1-52875
Publication Type
Conference paper
Publication Year
2012
Publication Title
Improved resistivity of GaN with partially Mg-doped grown on Si (111) substrates by MOCVD
Publication Citation
Advanced materials research, v. 442, 2012, p. 16-20
Publication ID
1783.1-55871
Publication Type
Conference paper
Publication Year
2012
Publication Title
Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD
Publication Citation
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, 2012, p. 5-9
Publication ID
1783.1-55873
Publication Type
Conference paper
Publication Year
2012
Publication Title
Progress on the GaN-based LEDs and LDs
Publication Citation
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, 2012, p. 105-110
Publication ID
1783.1-57539
Publication Type
Conference paper
Publication Year
2012
Publication Title
Improved GaN-based LED Grown on Silicon (111) Using Stress/Dislocation-Engineering Interlayers
Publication Citation
XVI International Conference on MOVPE (ICMOVPE), Busan, Korea, May 20-25, 2012
Publication ID
1783.1-56517
Publication Type
Conference paper
Publication Year
2012
Publication Title
Silicon and hybrid silicon photodetectors for photonic integrated circuits
Publication Citation
Asia Communications and Photonics Conference, Guangzhou, China, 2012, p. 1-1
Publication ID
1783.1-44083
Publication Type
Conference paper
Publication Year
2011
Publication Title
Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate
Publication Citation
Proceedings of SPIE--the international society for optical engineering, v. 8123, 2011
Publication ID
1783.1-33254
Publication Type
Conference paper
Publication Year
2011
Publication Title
InP Lattice-Matched HEMT with Regrown Source/Drain by MOCVD
Publication Citation
International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978339