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Man Hoi
WONG
黃 文 海

PhD in Electrical and Computer Engineering
Associate Professor
Room 2446
(852) 2358 8992
(852) 2358 1485
Google Scholar Citation
Research Area
Microelectronics (mE)
Quantum Engineering (QE)
Research Interests
Ultrawide-Bandgap Oxide/Nitride Semiconductor Materials and Devices
Fundamental Device Phenomena
Semiconductor Epitaxy and Process Integration
Power Semiconductor Devices
High-Speed Semiconductor Devices
Profile
Profile

PhD, University of California, Santa Barbara
MSc, University of California, Santa Barbara
BSc, Cornell University
Senior Member, IEEE
 

Man Hoi Wong grew up in Hong Kong and attended Queen’s College. He obtained his B.S. (summa cum laude) from Cornell University, USA, in 2004, with a double major in Electrical & Computer Engineering and Materials Science & Engineering. He received his Ph.D. in Electrical and Computer Engineering from the University of California Santa Barbara, USA, in 2009.

Prof. Wong’s Ph.D. dissertation topic is on nitrogen-polar gallium nitride (GaN) microwave transistors and related growth technologies by molecular beam epitaxy (MBE). From 2011 to 2013, he was a research scientist at the SEMATECH corporate research consortium in Texas, USA, where he developed in-house MBE capability to enable research on novel compound semiconductor devices for beyond-silicon digital electronics. From 2013 to 2019, he developed gallium oxide (Ga2O3) power devices at Japan’s National Institute of Information and Communications Technology (NICT)—Japan’s primary national research institute for information and communications. He joined the University of Massachusetts Lowell, USA, in 2019 as an Assistant Professor of Electrical and Computer Engineering. Since 2022, he is an Associate Professor of Electronic and Computer Engineering at the Hong Kong University of Science and Technology.

The research of Prof. Wong’s group is characterized by a strongly interplay between semiconductor device physics, materials science, and nanotechnology. This integrated approach accelerates the conception of radical and revolutionary devices and systems through judicious choices and combinations of new functional materials, thereby facilitating the identification of new applications and driving the development of creative, sustainable solutions that blend cross-disciplinary knowledge for addressing the emerging global societal challenges. Currently, he is focusing on ultrawide-bandgap oxide materials, group-III nitride semiconductors, and related heterostructures for high-voltage and high-speed electronics. 

Prof. Wong has published 76 journal articles, delivered 33 invited talks and seminars, and coauthored over 140 conference presentations. He is the lead author on 4 invited book chapters and 3 invited review papers on Ga2O3 and GaN transistor technologies. His work has been recognized by multiple awards, including an IEEE Best Paper Award (Device Research Conference 2008), SEMATECH’s Corporate Excellence Award (2012), the Young Researcher Award at the 2015 International Workshop on Gallium Oxide and Related Materials, and NICT’s Individual Achievement Award (2019). Since 2021, he has been serving as a Principal Editor for the Journal of Materials Research (published by Springer). He is a senior member of IEEE.